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Two-electron tin centers arising in glassy chalcogenides of arsenic due to nuclear reactions

  • Atomic Structure and Nonelectronic Propertties of Semiconductors
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Abstract

Impurity 119mSn atoms arising as a result of radioactive decay of parent 119mmSn atoms in the structure of the glasses As2S3, As2Se3, and As2Te3 are part of the glass composition in the form of structural units corresponding to tetravalent tin. The impurity 119mSn atoms formed as a result of radioactive decay of 119Sb atoms in the structure of the As2S3 and As2Se3 glasses are localized at the arsenic sites and play the role of two-electron centers with a negative correlation energy. For the As2Te3 glass, similarly formed 119mSn atoms are electrically inactive. The greatest part of the daughter 119mSn atoms arising after radioactive decay of parent 119mTe atoms are located at the chalcogen sites and are electrically inactive in the As2S3, As2Se3, and As2Te3 glasses. A significant recoil energy of daughter atoms in the case of the 119mTe radioactive decay brings about the appearance of the 119mSn displaced atoms.

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Authors and Affiliations

  1. Herzen State Pedagogical University, St. Petersburg, 191186, Russia

    G. A. Bordovsky, P. V. Gladkikh, M. Yu. Kozhokar, A. V. Marchenko & P. P. Seregin

  2. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    E. I. Terukov

Authors
  1. G. A. Bordovsky
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  2. P. V. Gladkikh
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  3. M. Yu. Kozhokar
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  4. A. V. Marchenko
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  5. P. P. Seregin
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  6. E. I. Terukov
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Corresponding author

Correspondence to P. P. Seregin.

Additional information

Original Russian Text © G.A. Bordovsky, P.V. Gladkikh, M.Yu. Kozhokar, A.V. Marchenko, P.P. Seregin, E.I. Terukov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 8, pp. 1012–1016.

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Bordovsky, G.A., Gladkikh, P.V., Kozhokar, M.Y. et al. Two-electron tin centers arising in glassy chalcogenides of arsenic due to nuclear reactions. Semiconductors 44, 978–982 (2010). https://doi.org/10.1134/S1063782610080026

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  • DOI: https://doi.org/10.1134/S1063782610080026

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