Abstract
Interference effects in InGaN/AlGaN/GaN light-emitting-diode heterostructures of blue emission are studied by spectroscopy of electroreflectance and electroluminescence. The periodic bands observed in the electroreflectance and electroluminescence spectra in a blue spectral range are caused by interference effects in the structure in general. The emergence of interference fringes in the electroreflection spectra is explained by modulation of built-in electric fields in the active region of the heterostructure. The long-period interference fringes observed in the electroreflectance spectra in a wide spectral range from infrared to ultra-violet allows one to determine the location of the active region of the heterostructure with respect to different reflecting surfaces in the cavity.
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Original Russian Text © L.P. Avakyants, P.Yu. Bokov, A.V. Chervyakov, A.V. Chuyas, A.E. Yunovich, E.D. Vasileva, D.A. Bauman, V.V. Uelin, B.S. Yavich, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 8, pp. 1124–1129.
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Avakyants, L.P., Bokov, P.Y., Chervyakov, A.V. et al. Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures. Semiconductors 44, 1090–1095 (2010). https://doi.org/10.1134/S1063782610080245
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DOI: https://doi.org/10.1134/S1063782610080245