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Metal-insulator-semiconductor barriers with a nanometer-thick aluminum nitride insulator on p-type silicon

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

The state of the interface between p-silicon and a nanometer-thick insulator is analyzed. DLTS spectra, obtained with deep centers in the bulk of the structure and its surface states recharged, are examined. The nature of the noise as a function of the reverse bias is determined for evaluating the possibility of using the structure as a nuclear radiation detector. A conclusion is drawn that the barrier used in the structure has a higher quality when nanometer-thick aluminum nitride films are deposited by dc, rather than ac, magnetron sputtering.

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References

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. M. Ivanov & N. B. Strokan

  2. Konstantinov Institute of Nuclear Physics in St. Petersburg, Russian Academy of Sciences, Leningradskaya oblast, Gatchina, St. Petersburg, 188350, Russia

    I. M. Kotina, M. S. Lasakov & L. M. Tuhkonen

Authors
  1. A. M. Ivanov
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  2. I. M. Kotina
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  3. M. S. Lasakov
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  4. N. B. Strokan
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  5. L. M. Tuhkonen
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Corresponding author

Correspondence to A. M. Ivanov.

Additional information

Original Russian Text © A.M. Ivanov, I.M. Kotina, M.S. Lasakov, N.B. Strokan, L.M. Tuhkonen, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 8, pp. 1064–1067.

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Ivanov, A.M., Kotina, I.M., Lasakov, M.S. et al. Metal-insulator-semiconductor barriers with a nanometer-thick aluminum nitride insulator on p-type silicon. Semiconductors 44, 1030–1033 (2010). https://doi.org/10.1134/S1063782610080130

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  • DOI: https://doi.org/10.1134/S1063782610080130

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