Abstract
Epitaxial In x Ga1 − x As/GaAs(100) heterostructures grown by the MOC-hydride method with a considerable lattice mismatch are studied by X-ray diffraction and scanning electron microscopy. The relaxation coefficient of the crystal lattice of the epitaxial alloy is calculated and the deformation energy is evaluated. It is shown that, at a concentration of the In atoms in metal sublattice close to x = 0.5, the superstructural phase formed on the surface of the epitaxial In x Ga1 − x As alloy is the InGaAs2 compound with a layered tetragonal crystal lattice and ordered arrangement of the atoms of the metal sublattice in the growth plane of the epitaxial film.
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Original Russian Text © P.V. Seredin, A.V. Glotov, E.P. Domashevskaya, I.N. Arsentyev, D.A. Vinokurov, A.L. Stankevich, I.S. Tarasov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 8, pp. 1140–1146.
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Seredin, P.V., Glotov, A.V., Domashevskaya, E.P. et al. Relaxation of crystal lattice parameters and structural ordering in In x Ga1 − x As epitaxial alloys. Semiconductors 44, 1106–1112 (2010). https://doi.org/10.1134/S1063782610080270
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DOI: https://doi.org/10.1134/S1063782610080270