A study of the process of decomposition of supersaturated GaAs:Fe solid solution by scanning probe microscopy S. S. KhludkovI. A. PrudaevI. V. Ivonin Atomic Structure and Nonelectronic Propertties of Semiconductors 18 August 2010 Pages: 975 - 977
Two-electron tin centers arising in glassy chalcogenides of arsenic due to nuclear reactions G. A. BordovskyP. V. GladkikhE. I. Terukov Atomic Structure and Nonelectronic Propertties of Semiconductors 18 August 2010 Pages: 978 - 982
Interaction of copper impurity with radiation defects in silicon doped with boron N. A. YarykinJ. Weber Atomic Structure and Nonelectronic Propertties of Semiconductors 18 August 2010 Pages: 983 - 986
Electron structure and spectral characteristics of Cd-substituted Ge-based clathrates N. A. BorshchN. S. PereslavtsevaS. I. Kurganskii Electrical and Optical Properties of Semiconductors 18 August 2010 Pages: 987 - 992
Study of main HgMnZnTe band parameters S. E. OstapovV. M. FrasunyakV. V. Zhikharevich Electrical and Optical Properties Of Semiconductors 18 August 2010 Pages: 993 - 996
Statistical method of deep-level transient spectroscopy in semiconductors E. A. TatokhinA. V. KadantsevV. G. Zadorozhniy Electrical and Optical Properties of Semiconductors 18 August 2010 Pages: 997 - 1003
Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide N. I. AnisimovaV. A. BordovskyR. A. Castro Electrical and Optical Properties of Semiconductors 18 August 2010 Pages: 1004 - 1007
Electron scattering by acceptor centers in p-Ag2Te at low temperatures F. F. AlievM. B. JafarovE. M. Gojaev Electrical and Optical Properties of Semiconductors 18 August 2010 Pages: 1008 - 1011
Optical properties of thin GaSe/n-Si(111) films M. P. KisselyukO. I. VlasenkoTs. A. Kryskov Semiconductor Structures, Interfaces, and Surfaces 18 August 2010 Pages: 1012 - 1015
Direct tunneling of electrons in Al-n +-Si-SiO2-n-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carriers E. I. GoldmanYu. V. GulyaevG. V. Chucheva Semiconductor Structures, Interfaces, and Surfaces 18 August 2010 Pages: 1016 - 1019
Capacitance-voltage characteristics of the electrolyte-n-InN surface and electron states at the interface M. E. RudinskyA. A. GutkinP. N. Brunkov Semiconductor Structures, Interfaces, and Surfaces 18 August 2010 Pages: 1020 - 1024
Development and photoelectric properties of In/p-Ag3AsS3 surface-barrier structures V. Yu. Rud’Yu. V. Rud’E. I. Terukov Semiconductor Structures, Interfaces, and Surfaces 18 August 2010 Pages: 1025 - 1029
Metal-insulator-semiconductor barriers with a nanometer-thick aluminum nitride insulator on p-type silicon A. M. IvanovI. M. KotinaL. M. Tuhkonen Semiconductor Structures, Interfaces, and Surfaces 18 August 2010 Pages: 1030 - 1033
Effect of spacer layers on current-voltage characteristics of resonant-tunneling diode M. A. RemnevI. Yu. KateevV. F. Elesin Low-Dimensional Systems 18 August 2010 Pages: 1034 - 1039
Raman studies of silicon nanocrystals embedded in silicon suboxide layers N. E. MaslovaA. A. AntonovskyV. N. Seminogov Low-Dimensional Systems 18 August 2010 Pages: 1040 - 1043
Raman scattering in organic semiconductors based on erbium biphthalocyanine molecules and chlorine-containing europium-lutetium triphthalocyanine molecules I. A. BelogorokhovD. A. MamichevD. R. Khokhlov Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 18 August 2010 Pages: 1044 - 1049
InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics V. G. TalalaevA. V. SenichevG. E. Cirlin Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 18 August 2010 Pages: 1050 - 1058
Study of spin centers in nanocrystalline titanium dioxide with a high degree of photocatalytic activity E. A. KonstantinovaV. Ya. GayvoronskiyP. K. Kashkarov Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 18 August 2010 Pages: 1059 - 1063
Study of photoluminescence and electroluminescence mechanisms in quantum-confined InSb/InAs heterostructures Ya. V. Terent’evM. S. MukhinS. V. Ivanov Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 18 August 2010 Pages: 1064 - 1069
Photoluminescence of nitro-substituted europium (III) phthalocyanines A. V. ZiminovYu. A. PolevayaN. K. Poletaev Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 18 August 2010 Pages: 1070 - 1073
A study of raman and rutherford backscattering spectra of amorphous carbon films modified with platinum A. D. RemenyukT. K. ZvonarevaJ. Wasyluk Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 18 August 2010 Pages: 1074 - 1079
Efficient photoelectric converters of ultraviolet radiation based on ZnS and CdS with low-resistivity surface layers Yu. N. BobrenkoS. Yu. PaveletsN. V. Yaroshenko Physics of Semiconductor Devices 18 August 2010 Pages: 1080 - 1083
Study of minority carrier diffusion lengths in photoactive layers of multijunction solar cells S. A. MintairovV. M. AndreevV. M. Lantratov Physics of Semiconductor Devices 18 August 2010 Pages: 1084 - 1089
Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures L. P. AvakyantsP. Yu. BokovB. S. Yavich Physics of Semiconductor Devices 18 August 2010 Pages: 1090 - 1095
InP/GaAsSb type-II DHBTs with GaAsSb/lnGaAs superlattice-base and GaAsSb bulk-base structures Jung-Hui TsaiWen-Shiung LourYing-Feng Dai Physics of Semiconductor Devices 18 August 2010 Pages: 1096 - 1100
Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding I. V. GrekhovL. S. KostinaJ. H. Je Fabrication, Treatment, and Testing of Materials and Structures 18 August 2010 Pages: 1101 - 1105
Relaxation of crystal lattice parameters and structural ordering in In x Ga1 − x As epitaxial alloys P. V. SeredinA. V. GlotovI. S. Tarasov Fabrication, Treatment, and Testing of Materials and Structures 18 August 2010 Pages: 1106 - 1112
Properties of ZnO whiskers under CO2-laser irradiation P. S. Shkumbatyuk Fabrication, Treatment, and Testing of Materials and Structures 18 August 2010 Pages: 1113 - 1116