Nonlinear photoluminescence of graded-gap AlxGa1−x As solid solutions V. F. KovalenkoA. Yu. MironchenkoS. V. Shutov Electronic and Optical Properties of Semiconductors Pages: 481 - 486
Features of determination of shallow-level impurity concentrations in semiconductors from analysis of the exciton luminescence spectrum K. D. GlinchukA. V. Prokhorovich Electronic and Optical Properties of Semiconductors Pages: 487 - 492
Deep level spectra of MBE-grown ZnTe:Cr2+ layers Yu. G. SadofyevM. V. Korshkov Electronic and Optical Properties of Semiconductors Pages: 493 - 495
Band structure of Mg2Si and Mg2Ge semiconducting compounds with a strained crystal lattice A. V. KrivosheevaA. N. KholodV. E. Borisenko Electronic and Optical Properties of Semiconductors Pages: 496 - 500
Localized states in Hg3In2Te6: Cr compounds P. N. GorleiO. G. GrushkaV. M. Frasunyak Electronic and Optical Properties of Semiconductors Pages: 501 - 504
Control of charge transport mode in the Schottky barrier by δ-doping: Calculation and experiment for Al/GaAs V. I. ShashkinA. V. MurelO. I. Khrykin Semiconductor Structures, Interfaces, and Surfaces Pages: 505 - 510
Electrons, holes, and excitons in a superlattice composed of cylindrical quantum dots with extremely weak coupling between quasiparticles in neighboring layers of quantum dots N. V. TkachA. M. MakhanetsG. G. Zegryae Low-Dimensional Systems Pages: 511 - 518
Evaluation of mobility gaps and density of localized hole states in p-Ge/Ge1−x Six heterostructures in the quantum Hall effect mode Yu. G. ArapovO. A. KuznetsovM. V. Yakunin Low-Dimensional Systems Pages: 519 - 526
Miniband spectra of (AlAs)M(GaAs)N(111) superlattices G. F. KaravaevV. N. ChernyshovR. M. Egunov Low-Dimensional Systems Pages: 527 - 534
Room temperature λ=1.3 µm photoluminescence from InGaAs quantum dots on (001) Si substrate T. M. BurbaevI. P. KazakovV. I. Tsekhosh Low-Dimensional Systems Pages: 535 - 538
Resonance tunneling and nonlinear current in heterobarriers with complex law of carrier dispersion C. S. KimA. M. SataninV. B. Shtenberg Low-Dimensional Systems Pages: 539 - 545
Multichannel carrier scattering at quantum-well heterostructures V. I. GalievA. N. KruglovT. L. Tansley Low-Dimensional Systems Pages: 546 - 551
Effect of hydrogen on the properties of Pd/GaAs/InGaAs diode structures with quantum wells I. A. KarpovichS. V. TikhovB. N. Zvonkov Low-Dimensional Systems Pages: 552 - 557
The interrelation of surface relief of porous silicon with specific features of Raman spectra B. M. BulakhB. R. JumayevV. O. Yukhymchuk Amorphous, Vitreous, and Porous Semiconductors Pages: 558 - 563
Formation of macropore nucleation centers in silicon by ion implantation E. V. AstrovaT. N. Vasunkina Amorphous, Vitreous, and Porous Semiconductors Pages: 564 - 567
X-ray-emission study of the structure of Si:H layers formed by low-energy hydrogen-ion implantation V. R. GalakhovI. V. AntonovaV. P. Popov Amorphous, Vitreous, and Porous Semiconductors Pages: 568 - 573
Preparation and study of carbidized porous silicon O. M. SreseliD. N. GoryachevA. Ya. Vul’ Amorphous, Vitreous, and Porous Semiconductors Pages: 574 - 580
Shallow p-n junctions formed in silicon using pulsed photon annealing S. T. ŞişianuT. S. ŞişianuS. K. Railean Physics of Semiconductor Devices Pages: 581 - 587
Simulation of avalanche multiplication of electrons in photodetectors with blocked hopping conduction S. P. Sinitsa Physics of Semiconductor Devices Pages: 588 - 591
Spectral line width of the current-tunable lasers on the base of InAsSb/InAsSbP at low temperature A. N. ImenkovN. M. KolchanovaYu. P. Yakovlev Physics of Semiconductor Devices Pages: 592 - 598
Generation of microwave oscillations in a no-base diode S. A. DarznekS. K. LyubutinB. G. Slovikovskii Physics of Semiconductor Devices Pages: 599 - 604
