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Control of charge transport mode in the Schottky barrier by δ-doping: Calculation and experiment for Al/GaAs

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

The possibility of controlling the effective barrier height in Schottky diodes by introducing a δ-doped layer near the metal-semiconductor contact is considered. A decrease in the effective barrier height is caused by the increased role of carrier tunneling through the barrier. A complete quantum-mechanical numerical simulation of the effect of the δ-layer parameters (concentration and depth) on the current-voltage characteristics of modified diodes was carried out for the Schottky barrier contacts to n-GaAs. The simulation results were found to fit well the experimental characteristics of diodes produced by metal-organic chemical vapor epitaxy. The studies carried out made it possible to choose the optimal δ-layer parameters to produce low-barrier (about 0.2 eV) diodes with a reasonable nonideality factor (n≤1.5). Such structures can be employed to fabricate microwave detector diodes without bias.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 603950, Russia

    V. I. Shashkin, A. V. Murel, V. M. Daniltsev & O. I. Khrykin

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  1. V. I. Shashkin
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  2. A. V. Murel
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  3. V. M. Daniltsev
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  4. O. I. Khrykin
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 5, 2002, pp. 537–542.

Original Russian Text Copyright © 2002 by Shashkin, Murel, Daniltsev, Khrykin.

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Shashkin, V.I., Murel, A.V., Daniltsev, V.M. et al. Control of charge transport mode in the Schottky barrier by δ-doping: Calculation and experiment for Al/GaAs. Semiconductors 36, 505–510 (2002). https://doi.org/10.1134/1.1478540

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  • DOI: https://doi.org/10.1134/1.1478540

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