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The interrelation of surface relief of porous silicon with specific features of Raman spectra

  • Amorphous, Vitreous, and Porous Semiconductors
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Abstract

Structural characteristics and Raman spectra of porous silicon layers were investigated. It was demonstrated that the effect of enhancement of the signal intensity of Raman scattering from porous silicon compared with the signal intensity from the substrate is associated with the presence of micrometer-size pores in the samples. A model making it possible to explain this enhancement, the signal shape, and the coincidence of the signal from the porous layer by the shape and location with the line from the Si substrate is suggested.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 03028, Ukraine

    B. M. Bulakh, B. R. Jumayev, N. O. Korsunska, O. S. Litvin, T. V. Torchynska, L. Yu. Khomenkova & V. O. Yukhymchuk

  2. Instituto Politecnico Nacional, U.P.A.L.M., 07738, Mexico D.F.

    T. V. Torchynska

Authors
  1. B. M. Bulakh
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  2. B. R. Jumayev
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  3. N. O. Korsunska
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  4. O. S. Litvin
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  5. T. V. Torchynska
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  6. L. Yu. Khomenkova
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  7. V. O. Yukhymchuk
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 5, 2002, pp. 587–592.

Original Russian Text Copyright © 2002 by Bulakh, Jumayev, Korsunska, Litvin, Torchynska, Khomenkova, Yukhymchuk.

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Bulakh, B.M., Jumayev, B.R., Korsunska, N.O. et al. The interrelation of surface relief of porous silicon with specific features of Raman spectra. Semiconductors 36, 558–563 (2002). https://doi.org/10.1134/1.1478548

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  • DOI: https://doi.org/10.1134/1.1478548

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