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Room temperature λ=1.3 µm photoluminescence from InGaAs quantum dots on (001) Si substrate

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Abstract

GaAs/InxGa1−x As quantum dot heterostructures exhibiting high-intensity λ=1.3 µm photoluminescence at room temperature have been grown on (001) Si substrate with a Si1−x Gex buffer layer. The growth was done successively on two MBE machines with sample transfer via the atmosphere. The results obtained by the study of the structure growth process by means of high-energy electron diffraction are presented.

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Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia

    T. M. Burbaev, I. P. Kazakov, V. A. Kurbatov, M. M. Rzaev, V. A. Tsvetkov & V. I. Tsekhosh

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  1. T. M. Burbaev
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  2. I. P. Kazakov
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  3. V. A. Kurbatov
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  4. M. M. Rzaev
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  5. V. A. Tsvetkov
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  6. V. I. Tsekhosh
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 5, 2002, pp. 565–568.

Original Russian Text Copyright © 2002 by Burbaev, Kazakov, Kurbatov, Rzaev, Tsvetkov, Tsekhosh.

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Burbaev, T.M., Kazakov, I.P., Kurbatov, V.A. et al. Room temperature λ=1.3 µm photoluminescence from InGaAs quantum dots on (001) Si substrate. Semiconductors 36, 535–538 (2002). https://doi.org/10.1134/1.1478544

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  • DOI: https://doi.org/10.1134/1.1478544

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