Abstract
The effect of isotropic and uniaxial deformation of a lattice on the electronic band structure of the indirect band gap Mg2Si and Mg2Ge semiconductors was investigated using the method of linear augmented plane waves. The reduction of the lattice constant down to 95% results in a linear increase in the energy gap for the direct transition in magnesium silicide by 48%. In contrast, the indirect band gap decreases and tends to overlap with the valence band, which is typical of the zero-gar semiconductors. The stresses arising under uniaxial deformation not only shift the bands but also split the degenerate states. The changes in the interband transitions under the uniaxial deformation are found to be nonlinear.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 5, 2002, pp. 528–532.
Original Russian Text Copyright © 2002 by Krivosheeva, Kholod, Shaposhnikov, Krivosheev, Borisenko.
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Krivosheeva, A.V., Kholod, A.N., Shaposhnikov, V.L. et al. Band structure of Mg2Si and Mg2Ge semiconducting compounds with a strained crystal lattice. Semiconductors 36, 496–500 (2002). https://doi.org/10.1134/1.1478538
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DOI: https://doi.org/10.1134/1.1478538