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Deep level spectra of MBE-grown ZnTe:Cr2+ layers

  • Electronic and Optical Properties of Semiconductors
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Abstract

ZnTe:Cr2+ layers grown by molecular beam epitaxy on (001) GaAs substrates and doped with chromium from a metallic source or CrI3 compound have been studied by current deep level transient spectroscopy (I-DLTS). The spectra of the layers show the presence of a deep level with an activation energy of (1.09±0.03) eV, related to a center originating from an electric-field-induced Cr2+-Cr+ transition. Doping with chromium from CrI3 compound eliminates a number of point defects characteristic of ZnTe epitaxial layers, but leads to pronounced contamination of the grown films with iodine.

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Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 117924, Russia

    Yu. G. Sadofyev

  2. Ryazan State Academy of Radio Engineering, Ryazan, 391000, Russia

    M. V. Korshkov

Authors
  1. Yu. G. Sadofyev
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  2. M. V. Korshkov
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 5, 2002, pp. 525–527.

Original Russian Text Copyright © 2002 by Sadofyev, Korshkov.

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Sadofyev, Y.G., Korshkov, M.V. Deep level spectra of MBE-grown ZnTe:Cr2+ layers. Semiconductors 36, 493–495 (2002). https://doi.org/10.1134/1.1478537

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  • DOI: https://doi.org/10.1134/1.1478537

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