Physical foundations of metastable impurity center reconstruction in semiconductors D. E. OnopkoA. I. Ryskin Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1223 - 1230
A model of high-and low-temperature phosphorus diffusion in silicon by a dual pair mechanism O. V. Aleksandrov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1231 - 1241
The impurity optical absorption and conduction band structure in 6H-SiC I. S. Gorban’A. P. Krokhmal’ Electronic and Optical Properties of Semiconductors Pages: 1242 - 1248
Magnetic properties of Pb1−x GexTe alloys doped with ytterbium E. P. SkipetrovN. A. ChernovaE. I. Slyn’ko Electronic and Optical Properties of Semiconductors Pages: 1249 - 1251
On the charge transport mechanism in n-InSb films Yu. A. Nikol’skii Electronic and Optical Properties of Semiconductors Pages: 1252 - 1253
Effect of bismuth impurity on carrier density in PbSe:Bi:Se epitaxial layers V. A. ZykovT. A. GavrikovaP. V. Savintsev Electronic and Optical Properties of Semiconductors Pages: 1254 - 1258
Photoelectric phenomena in (μc xa1−x )-Si:H/c-Si heterostructures H. MellYu. A. NikolaevE. I. Terukov Electronic and Optical Properties of Semiconductors Pages: 1259 - 1262
A pulsed synthesis of β-FeSi2 layers on silicon implanted with Fe+ ions R. I. BatalovR. M. BayazitovH. Kuehne Electronic and Optical Properties of Semiconductors Pages: 1263 - 1269
Generation-recombination and diffusion currents in HgMnTe n +-p junctions L. A. KosyachenkoA. V. MarkovI. M. Rarenko Semiconductor Structures, Interfaces, and Surfaces Pages: 1270 - 1278
Effect of surface orientation of CdxHg1−x Te crystals on the properties of surface anodic oxides V. G. SredinYu. S. MezinV. M. Ukrozhenko Semiconductor Structures, Interfaces, and Surfaces Pages: 1279 - 1281
Photosensitivity of a-C:H/c-Si heterojunctions V. G. BaryshnikovYu. A. NikolaevE. I. Terukov Semiconductor Structures, Interfaces, and Surfaces Pages: 1282 - 1284
Reverse current in graded-gap p-n structure with nonmonotonic coordinate dependence of the band gap B. S. Sokolovskii Semiconductor Structures, Interfaces, and Surfaces Pages: 1285 - 1290
Role of sulfide ion solvation in the modification of GaAs surface electronic structure M. V. Lebedev Semiconductor Structures, Interfaces, and Surfaces Pages: 1291 - 1299
Analogue of gunn effect in tunneling between quantum wells with different mobilities P. I. BiryulinA. A. GorbatsevichV. T. Trofimov Low-Dimensional Systems Pages: 1300 - 1304
Electron nonelastic scattering by confined and interface polar optical phonons in a modulation-doped AlGaAs/GaAs/AlGaAs quantum well K. Požela Low-Dimensional Systems Pages: 1305 - 1308
Electrical characteristics of single-gate interference transistors based on various semiconductor materials I. I. AbramovA. I. Rahachou Low-Dimensional Systems Pages: 1309 - 1313
Medium-range order and optoelectronic properties of a tetrahedrally coordinated hydrogenated amorphous semiconductor O. A. Golikova Low-Dimensional Systems Pages: 1314 - 1319
Structural and photonic properties of opal-GaN nanocomposites V. G. GolubevD. A. KurdyukovJ. L. Hutchison Low-Dimensional Systems Pages: 1320 - 1323
MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes D. A. VinokurovV. A. KapitonovI. S. Tarasov Physics of Semiconductor Devices Pages: 1324 - 1328
Photoluminescence properties of polycrystalline ZnO/CdS/CuInGaSe2 solar cells at a low temperature G. A. MedvedkinE. I. TerukovK. Hirose Physics of Semiconductor Devices Pages: 1329 - 1334
Simulation of current-voltage characteristics of a ferroelectric field-effect transistor L. S. Berman Physics of Semiconductor Devices Pages: 1335 - 1339
Improved degradation stability of blue-green II-VI light-emitting diodes with excluded nitrogen-doped ZnSe-based layers N. Yu. GordeevS. V. IvanovG. Landwehr Physics of Semiconductor Devices Pages: 1340 - 1344
In memory of Aleksei Petrovich Shotov (1927–2001) Zh. I. AlferovV. S. BagaevA. É. Yunovich Personalia Pages: 1345 - 1346
