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On the charge transport mechanism in n-InSb films

  • Electronic and Optical Properties of Semiconductors
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Abstract

The structure of the conduction band bottom of polycrystalline and recrystallized n-InSb films grown on silicon dioxide substrates has been studied by measuring the temperature dependence of the electrical conductivity in the intrinsic conductivity range. Linear dependences lnσ=f(103/T) with different slopes can be observed in heterogeneous semiconductors in the intrinsic conductivity range. The percolation level has been determined from the average of ΔE 1, ΔE 2, ..., ΔE n to be 0.165 eV for polycrystalline and 0.2 eV for recrystallized films.

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Authors and Affiliations

  1. Borisoglebsk State Pedagogical Institute, Borisoglebsk, Voronezh oblast, 397160, Russia

    Yu. A. Nikol’skii

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  1. Yu. A. Nikol’skii
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 11, 2001, pp. 1309–1310.

Original Russian Text Copyright © 2001 by Nikol’ski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \).

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Nikol’skii, Y.A. On the charge transport mechanism in n-InSb films. Semiconductors 35, 1252–1253 (2001). https://doi.org/10.1134/1.1418066

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  • DOI: https://doi.org/10.1134/1.1418066

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