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Photosensitivity of a-C:H/c-Si heterojunctions

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

Layers of a-C:H were grown on c-Si wafers by the glow discharge method in a CH4 + Ar gaseous mixture. The electrical and photoelectric properties of a-C:H/c-Si heterojunctions were studied. It was found that the heterojunctions display rectification and broad-band photovoltaic effects. It is shown that the polarization sensitivity in these structures occurs at an oblique incidence of linearly polarized light under the illumination of the surface coated with a-C:H layers. The observed oscillations in the spectrum of the coefficient of induced photopleochroism are attributed to the interference of light in these layers.

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Authors and Affiliations

  1. Institute of Physics, Dagestan Science Center, Russian Academy of Sciences, Makhachkala, 367030, Russia

    V. G. Baryshnikov

  2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia

    Yu. A. Nikolaev, Yu. V. Rud’ & E. I. Terukov

  3. St. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, Russia

    V. Yu. Rud’

Authors
  1. V. G. Baryshnikov
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  2. Yu. A. Nikolaev
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  3. V. Yu. Rud’
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  4. Yu. V. Rud’
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  5. E. I. Terukov
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 11, 2001, pp. 1338–1340.

Original Russian Text Copyright © 2001 by Baryshnikov, Nikolaev, V. Rud’, Yu. Rud’, Terukov.

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Baryshnikov, V.G., Nikolaev, Y.A., Rud’, V.Y. et al. Photosensitivity of a-C:H/c-Si heterojunctions. Semiconductors 35, 1282–1284 (2001). https://doi.org/10.1134/1.1418072

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  • DOI: https://doi.org/10.1134/1.1418072

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