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Role of sulfide ion solvation in the modification of GaAs surface electronic structure

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

A model is proposed wherein the interaction of the adsorbate (sulfide ion) with the GaAs surface is considered with allowance made for the influence of the solvation shell. It is shown by quantum-chemical calculations that the solvation of the adsorbate by different solvent molecules results in the variation of the relationship between the adsorbate ability to accept and donate electrons in chemical reactions, which has a determining effect on the adsorbate interaction with the semiconductor surface states and, thus, on the modification of the electronic structure of the semiconductor surface.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    M. V. Lebedev

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  1. M. V. Lebedev
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 11, 2001, pp. 1347–1355.

Original Russian Text Copyright © 2001 by Lebedev.

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Lebedev, M.V. Role of sulfide ion solvation in the modification of GaAs surface electronic structure. Semiconductors 35, 1291–1299 (2001). https://doi.org/10.1134/1.1418074

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  • DOI: https://doi.org/10.1134/1.1418074

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