Abstract
Heterostructures (μc xa1−x )-Si:H/c-Si with a various volume fraction x of microcrystalline and amorphous Si phases were obtained by plasmochemical deposition. The fraction variation was achieved by changing the silane content in H2. The steady-state current-voltage characteristics and spectral dependences of photosensitivity of the structures obtained were investigated. The latter dependences were recorded by exposing the samples to the natural and linearly polarized light in relation to the phase composition of thin (d 1 ≅ 0.6–0.8 µm) films of microcrystalline and amorphous Si. The photovoltaic effect and induced photopleochroism of the structures obtained were detected. The prospects of using a new type of heterojunction in photoconverters of natural and linearly polarized light were assessed.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 11, 2001, pp. 1316–1319.
Original Russian Text Copyright © 2001 by Mell, Nikolaev, V. Rud’, Yu. Rud’, Terukov.
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Mell, H., Nikolaev, Y.A., Rud’, V.Y. et al. Photoelectric phenomena in (μc xa1−x )-Si:H/c-Si heterostructures. Semiconductors 35, 1259–1262 (2001). https://doi.org/10.1134/1.1418068
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DOI: https://doi.org/10.1134/1.1418068