Abstract
The dependence of the Hall carrier density on bismuth concentration, n, p=f(N Bi), in PbSe:Bi:Se/BaF2 films has been studied. The films were grown by vacuum condensation from two independent molecular beams (PbSe:Bi and Se2) mixed directly at the surface of a (111)BaF2 substrate heated to 350°C. The bismuth concentration in the stock was 0–0.3 at. %. Two specific portions can be distinguished in the experimental n, p=f(N Bi) dependence. At N Bi>0.0375 at. %, the electron density is close to N Bi; at low bismuth concentrations, N Bi<0.0375 at. %, the linear run of the n=f(N Bi) dependence is violated, and the conduction changes to p-type. All the doped films under study are saturated with selenium. This is a necessary condition for obtaining the highest electron densities in the films at N Bi corresponding to the linear portion of the n=f(N Bi) dependence. The results are discussed in terms of a thermodynamic model of the impurity interaction with intrinsic defects in PbSe, taking into account the amphoteric behavior of bismuth atoms in lead selenide.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 11, 2001, pp. 1311–1315.
Original Russian Text Copyright © 2001 by Zykov, Gavrikova, Il’in, Nemov, Savintsev.
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Zykov, V.A., Gavrikova, T.A., Il’in, V.I. et al. Effect of bismuth impurity on carrier density in PbSe:Bi:Se epitaxial layers. Semiconductors 35, 1254–1258 (2001). https://doi.org/10.1134/1.1418067
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DOI: https://doi.org/10.1134/1.1418067