1. Low-temperature relaxation of a solid solution of iron in gallium phosphide

   • E. S. Demidov
   • V. V. Karzanov
   • O. N. Morozkin

   Atomic Structure and Non-electronic Properties of Semiconductors Pages: 377 - 379

2. Modeling Si nanoprecipitate formation in SiO₂ layers with excess Si atoms

   • A. F. Leier
   • L. N. Safronov
   • G. A. Kachurin

   Atomic Structure and Non-electronic Properties of Semiconductors Pages: 380 - 384

3. Optical spectra and electronic structure of indium nitride

   • V. V. Sobolev
   • M. A. Zlobina

   Electronic and Optical Properties of Semiconductors Pages: 385 - 390

4. Electrostatic model of the energy gap between Hubbard bands for boron atoms in silicon

   • N. A. Poklonskii
   • A. I. Syaglo

   Electronic and Optical Properties of Semiconductors Pages: 391 - 393

5. The influence of defect clusters on redistribution of doping impurities in n-and p-type Si_0.7Ge_0.3 irradiated by reactor neutrons

   • A. P. Dolgolenko

   Electronic and Optical Properties of Semiconductors Pages: 394 - 397

6. Acoustostimulated activation of bound defects in CdHgTe alloys

   • A. I. Vlasenko
   • Ya. M. Olikh
   • R. K. Savkina

   Electronic and Optical Properties of Semiconductors Pages: 398 - 401

7. A model of how the thermal ionization energy of impurities in semiconductors depends on their concentration and compensation

   • N. A. Poklonskii
   • A. I. Syaglo
   • G. Biskupski

   Electronic and Optical Properties of Semiconductors Pages: 402 - 406

8. Low-temperature photoluminescence in holmium-doped silicon

   • B. A. Andreev
   • N. A. Sobolev
   • E. O. Parshin

   Electronic and Optical Properties of Semiconductors Pages: 407 - 409

9. Generation-recombination instabilities in thin-film structures

   • V. V. Kolobaev

   Semiconductor Structures, Interfaces and Surfaces Pages: 410 - 411

10. Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures

    • V. M. Botnaryuk
    • Yu. V. Zhilyaev
    • V. Yu. Rud’

    Semiconductor Structures, Interfaces and Surfaces Pages: 412 - 415

11. Surface of n-type InP (100) passivated in sulfide solutions

    • V. N. Bessolov
    • M. V. Lebedev
    • D. R. T. Zahn

    Semiconductor Structures, Interfaces and Surfaces Pages: 416 - 420

12. Electrical and photoelectric characteristics of an isotypic n-ZnO-n-Si structure

    • S. V. Slobodchikov
    • Kh. M. Salikhov
    • E. V. Russu

    Semiconductor Structures, Interfaces and Surfaces Pages: 421 - 422

13. Analysis of mechanisms for electron scattering in GaAs/Al_xGa_1−x As superlattices with doped quantum wells for longitudinal resonant current flow in high electric fields and at low temperatures

    • S. I. Borisenko
    • G. F. Karavaev

    Low-Dimensional Systems Pages: 423 - 428

14. Luminescence and electrical properties of InGaN/AlGaN/GaN light emitting diodes with multiple quantum wells

    • V. E. Kudryashov
    • A. N. Turkin
    • F. I. Manyakhin

    Low-Dimensional Systems Pages: 429 - 434

15. Photoionization of deep impurity centers in quantum well structures

    • V. I. Belyavskii
    • Yu. A. Pomerantsev

    Low-Dimensional Systems Pages: 435 - 439

16. Photovoltaic effect in the impurity absorption region of Si-structures with blocked impurity conductivity

    • B. A. Aronzon
    • V. V. Rylkov
    • J. Leotin

    Low-Dimensional Systems Pages: 440 - 446

17. Defects in a-Si:H films induced by Si ion implantation

    • O. A. Golikova

    Amorphous, Glassy and Porous Semiconductors Pages: 447 - 450

18. Absorption and the optical gap of a-C:H films produced from acetylene plasmas

    • E. A. Konshina

    Amorphous, Glassy and Porous Semiconductors Pages: 451 - 456

19. Conductivity relaxation in coated porous silicon after annealing

    • S. P. Zimin
    • A. N. Bragin

    Amorphous, Glassy and Porous Semiconductors Pages: 457 - 460

20. Photomemory in CdTe thin-film solar cells

    • É. N. Voronkov
    • A. E. Sharonov
    • V. V. Kolobaev

    The Physics of Semiconductor Devices Pages: 461 - 462

21. Polarization photosensitivity of ZnO/CdS/Cu(In,Ga)Se₂ solar cells

    • V. Yu. Rud’
    • Yu. V. Rud’
    • H. W. Schock

    The Physics of Semiconductor Devices Pages: 463 - 466

22. Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host

    • A. F. Tsatsul’nikov
    • B. V. Volovik
    • D. Bimberg

    The Physics of Semiconductor Devices Pages: 467 - 470

23. Influence of deep traps on current transport in Pd-p(n)-CdTe structures

    • S. V. Slobodchikov
    • Kh. M. Salikhov
    • E. V. Russu

    The Physics of Semiconductor Devices Pages: 471 - 472

24. Determination of the parameters of deep levels from the relaxational delay of breakdown of a p-n junction

    • S. V. Bulyarskii
    • Yu. N. Serëzhkin
    • V. K. Ionychev

    The Physics of Semiconductor Devices Pages: 473 - 476

25. Effect of laser radiation on GaP epitaxial diode structures

    • V. V. Inyakov
    • E. N. Moos
    • Yu. A. Shrainer

    The Physics of Semiconductor Devices Pages: 477 - 478

26. Vitali\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Ivanovich Stafeev (on his 70th birthday)

    • Zh. I. Alferov
    • L. A. Bovina
    • L. E. Vorob’ev

    Personalia Pages: 479 - 480

27. Aleksandr Aleksandrovich Lebedev (on his 70th birthday)

    Personalia Pages: 481 - 481