Abstract
The current-voltage characteristics and photovoltage of Pd-p(n)-CdTe structures and changes in them produced by pulsed hydrogen treatment have been investigated. The current transport in Pd-n-CdTe structures [I∼exp(αV)] is found to be linked with double injection of carriers occurring as a result of their capture at trapping centers that are uniformly distributed over energy. The semiconductor regime of double injection with I∼V 2 is important for Pd-p-CdTe structures. A series of deep trapping centers, including those in the interval 0.75–0.83 eV, is responsible for the extended relaxation of the photovoltage and dark current after a hydrogen pulse (H2).
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Reference
Semiconductors and Semimetals (Academic Press, New York, 1978), Vol. 13.
M. Lampert and P. Mark, Current Injection in Solids (Academic Press, New York, 1970), Ch. 4.
A. Castaldini, A. Cavallini, and B. Fraboni, J. Appl. Phys. 83, 2121 (1997).
T. Takebe, J. Saraie, and H. Matsunami, J. Appl. Phys. 53(1), 457 (1982).
G. G. Kovalevskaya, M. M. Meredov, E. V. Russu, Kh. M. Salikhov, and S. V. Slobodchikov, Zh. Tekh. Fiz. 63(2), 185 (1993) [Tech. Phys. 38, 149 (1993)].
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Fiz. Tekh. Poluprovodn. 33, 492–493 (April 1999)
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Slobodchikov, S.V., Salikhov, K.M. & Russu, E.V. Influence of deep traps on current transport in Pd-p(n)-CdTe structures. Semiconductors 33, 471–472 (1999). https://doi.org/10.1134/1.1187714
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DOI: https://doi.org/10.1134/1.1187714