Abstract
Undoped a-Si:H films implanted with silicon ions (dose 1012–1014 cm−2, mean energy ɛ=60 keV) at room temperature have been studied. The following results of the interaction of such films with ion beams have been established: formation of defects (dangling Si-Si bonds) in the neutral state (D 0), change in the charge state D 0→D −, the a-Si:H→a-Si transition, and growth of inhomogeneity of the structure. It is shown that these effects depend on the initial structures and electronic characteristics of the films.
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Fiz. Tekh. Poluprovodn. 33, 464–468 (April 1999)
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Golikova, O.A. Defects in a-Si:H films induced by Si ion implantation. Semiconductors 33, 447–450 (1999). https://doi.org/10.1134/1.1187896
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DOI: https://doi.org/10.1134/1.1187896