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Excimer-laser-induced permanent electrical conductivity in solid C60 films D. NingQ. H. LouY. R. Wei OriginalPaper Pages: 509 - 512
Microstructure and roughness improvement of polycrystalline Bi thin films upon pulsed-laser melting T. MissanaC. N. Afonso OriginalPaper Pages: 513 - 518
Processing and properties of some II–IV–V2 amorphous and crystalline semiconductors S. H. Risbud OriginalPaper Pages: 519 - 523
57Fe Mössbauer spectra study of coated α-Fe2O3 nanoparticles Haosheng FeiMingyuan GaoJiacong Shen OriginalPaper Pages: 525 - 528
Using positron 2D-ACAR as a probe of point defects in GaAs: The As vacancy as a case study R. AmbigapathyC. CorbelK. Saarinen OriginalPaper Pages: 529 - 532
High fluence laser ablation of aluminum targets: Time-of-flight mass analysis of plasmas produced at wavelengths 532 and 355 nm S. AmorusoV. BerardiM. Armenante OriginalPaper Pages: 533 - 541
Preparation and characterization of highly oriented, photoconducting WS2 thin films C. BallifM. RegulaF. Lévy OriginalPaper Pages: 543 - 546
Photovoltage and photo-induced charge trapping in porous silicon P. K. KashkarovE. A. KonstantinovaV. Yu. Timoshenko OriginalPaper Pages: 547 - 551
Investigations on the expansion dynamics of Ge atoms produced from laser-ablated GeO2 P. J. Wolf OriginalPaper Pages: 553 - 558
Laser-induced structural relaxation in Sb-rich SbGe films M. C. MorillaC. N. AfonsoJ. Solis OriginalPaper Pages: 559 - 564
Investigation by ellipsometry of the damage in GaAs bombarded with low-energy Ar ions I. N. KoprinarovU. Müller-JahreisP. Thiele OriginalPaper Pages: 565 - 570
Chemical-specific imaging of multicomponent metal surfaces on the nanometer scale by scanning tunneling spectroscopy M. BodeR. PascalR. Wiesendanger Rapid Communication Pages: 571 - 573
Vertical ordering of islands in Ge-Si multilayers B. RahmatiW. JägerH. Lüth Rapid Communication Pages: 575 - 579