Abstract
The crystalline-amorphous transition in GaAs induced by Ar ions (energy 1–3 keV) has been investigated using single-wavelength ellipsometry. The experiments have been performed in-situ at room temperature. Ion damage straggling, amorphization threshold and critical energy density have been derived by means of a simple analytical model for the growth of the amorphous layer. This model is discussed and the corresponding calculations are found to be in satisfactory agreement with experimental data.
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Koprinarov, I.N., Müller-Jahreis, U. & Thiele, P. Investigation by ellipsometry of the damage in GaAs bombarded with low-energy Ar ions. Appl. Phys. A 62, 565–570 (1996). https://doi.org/10.1007/BF01571694
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DOI: https://doi.org/10.1007/BF01571694