Abstract
Structural relaxation processes are induced by pulsed laser irradiation in amorphous SbGe thin films with compositions richer in Sb than the eutectics. These processes are studied by means of real-time optical measurements and transmission electron microscopy analytical techniques. The influence of the laser pulse length and the film composition is analysed. The results show that the relaxed amorphous material exhibits different optical properties, density and lower-energy density threshold for crystallisation. A qualitative change in the relaxation mechanism is observed when the composition of the films is slightly changed.
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The optical constants used in the simulation were:n = 2.87,k = 4.5. for l-Sb;n = 2.85,k = 5.03 for p-Sb andn = 3.47,k = 3.17 for amorphous Sb0.87Ge0.13, taken from [20].
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