Anisotropic Jahn–Teller acceptors formed in GaAs by first-group elements with a filled d shell A. A. GutkinN. S. Averkiev Review 07 October 2017 Pages: 1247 - 1273
Tight-binding simulation of silicon and germanium nanocrystals A. V. GertM. O. NestoklonI. N. Yassievich Review 07 October 2017 Pages: 1274 - 1289
Effects of local photoexcitation of high-concentration charge carriers in silicon A. M. Musaev Electronic Properties of Semiconductors 07 October 2017 Pages: 1290 - 1294
Reflectance spectra of p-Bi2Te3:Sn crystals in a wide IR region S. A. NemovYu. V. UlashkevichA. A. Allahkhah Spectroscopy, Interaction with Radiation 07 October 2017 Pages: 1295 - 1299
Interdiffusion and phase formation in the Fe–TiO2 thin-film system N. N. AfoninV. A. Logacheva Surfaces, Interfaces, and Thin Films 07 October 2017 Pages: 1300 - 1305
Mechanism of resistive switching in films based on partially fluorinated graphene A. I. IvanovN. A. NebogatikovaI. V. Antonova Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2017 Pages: 1306 - 1312
Quantum corrections to the conductivity and anomalous Hall effect in InGaAs quantum wells with a spatially separated Mn impurity L. N. OveshnikovE. I. Nekhaeva Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2017 Pages: 1313 - 1320
Criterion for strong localization on a semiconductor surface in the Thomas–Fermi approximation V. B. BondarenkoA. V. Filimonov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2017 Pages: 1321 - 1325
Measurement of the lifetimes of vibrational states of DNA molecules in functionalized complexes of semiconductor quantum dots F. B. BayramovE. D. PoloskinB. Kh. Bairamov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2017 Pages: 1326 - 1331
On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate F. I. ZubovE. S. SemenovaA. E. Zhukov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2017 Pages: 1332 - 1336
Photoluminescence of perovskite CsPbX 3 (X = Cl, Br, I) nanocrystals and solid solutions on their basis L. B. MatyushkinV. A. Moshnikov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2017 Pages: 1337 - 1342
Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field M. P. MikhailovaV. A. BerezovetsE. Hulicius Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2017 Pages: 1343 - 1349
X-ray photoelectron spectroscopy studies of ZnS x Se1–x nanostructures produced in a porous aluminum-oxide matrix A. I. ChukavinR. G. ValeevA. N. Beltiukov Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 07 October 2017 Pages: 1350 - 1353
Degradation of the parameters of transistor temperature sensors under the effect of ionizing radiation I. M. VikulinV. E. GorbachevSh. D. Kurmashev Physics of Semiconductor Devices 07 October 2017 Pages: 1354 - 1359
Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well N. V. DikarevaB. N. ZvonkovA. A. Dubinov Physics of Semiconductor Devices 07 October 2017 Pages: 1360 - 1363
Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure I. E. TyschenkoA. G. Cherkov Fabrication, Treatment, and Testing of Materials and Structures 07 October 2017 Pages: 1364 - 1369
Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region G. K. KrivyakinV. A. VolodinJ. Stuchlik Fabrication, Treatment, and Testing of Materials and Structures 07 October 2017 Pages: 1370 - 1376
Growth and properties of isoparametric InAlGaPAs/GaAs heterostructures D. L. AlfimovaL. S. LuninS. N. Chebotarev Fabrication, Treatment, and Testing of Materials and Structures 07 October 2017 Pages: 1377 - 1384
(FeIn2S4) x · (AgIn5S8)1–x alloys: Crystal structure, nuclear γ-Resonance spectra, and band gap I. V. BodnarT. G. BaruguYu. A. Fedotova Fabrication, Treatment, and Testing of Materials and Structures 07 October 2017 Pages: 1385 - 1389