Abstract
The results obtained in the growth of isoparametric InAlGaPAs/GaAs heterostructures are discussed. The composition, structural quality, and luminescence properties of the heterostructures are studied.
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Original Russian Text © D.L. Alfimova, L.S. Lunin, M.L. Lunina, D.A. Arustamyan, A.E. Kazakova, S.N. Chebotarev, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 10, pp. 1427–1434.
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Alfimova, D.L., Lunin, L.S., Lunina, M.L. et al. Growth and properties of isoparametric InAlGaPAs/GaAs heterostructures. Semiconductors 51, 1377–1384 (2017). https://doi.org/10.1134/S1063782617100037
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DOI: https://doi.org/10.1134/S1063782617100037