Abstract
This review is devoted to the modeling of Si and Ge nanocrystals by means of the tight-binding method. First we give the short outline of the modeling methods and their application for the discription of silicon and germanium nanocrystals. Then, the tight-binding method with extended s, p, d, and s* basis is explained in details and the results obtained with the use of this method are presented.
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Original Russian Text © A.V. Gert, M.O. Nestoklon, A.A. Prokofiev, I.N. Yassievich, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 10, pp. 1325–1340.
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Gert, A.V., Nestoklon, M.O., Prokofiev, A.A. et al. Tight-binding simulation of silicon and germanium nanocrystals. Semiconductors 51, 1274–1289 (2017). https://doi.org/10.1134/S1063782617100098
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DOI: https://doi.org/10.1134/S1063782617100098