Kinetics of defect formation in ZnO subjected to a flux of oxygen radicals M. B. KotlyarevskyI. V. RogozinA. V. Marakhovskii Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 609 - 614
Specific features of the segregation-related redistribution of phosphorus during thermal oxidation of heavily doped silicon layers O. V. AleksandrovN. N. Afonin Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 615 - 622
Thermodynamic stability and redistribution of charges in ternary AlGaN, InGaN, and InAlN alloys V. G. DeibukA. V. Voznyi Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 623 - 628
Determination of the concentration of deep levels in semi-insulating CdS single crystals by photoinduced-current transient spectroscopy A. P. Odrinskii Electronic and Optical Properties of Semiconductors Pages: 629 - 635
Determination of the charge carrier concentration in lead selenide polycrystalline layers using reflectance spectra A. E. GamartsYu. M. KanageevaV. A. Moshnikov Electronic and Optical Properties of Semiconductors Pages: 636 - 637
Energy parameters of two-electron tin centers in PbSe S. A. NemovF. S. NasredinovÉ. S. Khuzhakulov Electronic and Optical Properties of Semiconductors Pages: 638 - 641
Dynamic chaos in a partially illuminated compensated semiconductor under the conditions of impurity-related breakdown K. M. JandieriZ. S. KachlishviliA. B. Stroganov Electronic and Optical Properties of Semiconductors Pages: 642 - 649
Modulation of the characteristics of intense picosecond stimulated emission from GaAs N. N. AgeevaI. L. BronevoiS. V. Stegantsov Electronic and Optical Properties of Semiconductors Pages: 650 - 657
Recombination mechanism of the piezophotoresistive effect in compensated semiconductors B. M. PavlyshenkoR. Ya. Shuvar Electronic and Optical Properties of Semiconductors Pages: 658 - 660
Spontaneous and stimulated UV luminescence of ZnO:N at 77 K A. N. GeorgobianiA. N. GruzintsevP. Benalloul Electronic and Optical Properties of Semiconductors Pages: 661 - 665
Increase in the rate and discretization of the kinetics of isothermal surface generation of minority charge carriers in metal-insulator-semiconductor structures with a planar-inhomogeneous insulator A. G. ZhdanE. I. GoldmanG. V. Chucheva Semiconductor Structures, Interfaces, and Surfaces Pages: 666 - 673
Thermal-field forward current in GaN-based surface-barrier structures T. V. BlankYu. A. GoldbergN. M. Shmidt Semiconductor Structures, Interfaces, and Surfaces Pages: 674 - 678
The effect of adsorbed molecules on the charge-carrier spectrum in a semiconductor nanowire V. A. LykakhE. S. Syrkin Low-Dimensional Systems Pages: 679 - 684
Local tunneling spectroscopy of silicon nanostructures N. T. BagraevA. D. BouravlevS. A. Rykov Low-Dimensional Systems Pages: 685 - 696
Room-temperature electroreflectance and reflectance of a GaAs/AlGaAs single quantum well structure A. A. HerasimovichS. V. ShokhovetsD. S. Domanevskii Low-Dimensional Systems Pages: 697 - 702
The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3–1.55 μm N. V. KryzhanovskayaA. Yu. EgorovD. Bimberg Low-Dimensional Systems Pages: 703 - 708
Structural defects and electrical conductivity in nanocrystalline SiC:H films doped with boron and grown by photostimulated chemical-vapor deposition O. I. ShevaleevskiyS. Y. MyongM. Konagai Amorphous, Vitreous, and Porous Semiconductors Pages: 709 - 711
The physical properties of CdTe doped with V and Ge S. Yu. ParanchychL. D. ParanchychV. R. Romanyuk Physics of Semiconductor Devices Pages: 712 - 715
A new memory element based on silicon nanoclusters in a ZrO2 insulator with a high permittivity for electrically erasable read-only memory V. A. GritsenkoK. A. NasyrovC. W. Kim Physics of Semiconductor Devices Pages: 716 - 721
Special features of charge transport in Schottky diodes based on semi-insulating CdTe L. A. KosyachenkoO. L. MaslyanchukV. M. Sklyarchuk Physics of Semiconductor Devices Pages: 722 - 729
A 4H-SiCp-i-n diode fabricated by a combination of sublimation epitaxy and CVD E. V. BogdanovaA. A. VolkovaL. P. Romanov Physics of Semiconductor Devices Pages: 730 - 733