Skip to main content
SpringerLink
Log in

A 4H-SiCp-i-n diode fabricated by a combination of sublimation epitaxy and CVD

  • Physics of Semiconductor Devices
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

The possibility of fabricating heavily doped (N a −N d ≥ 1 × 1019 cm−3) p +-4H-SiC layers on CVD-grown lightly doped n-4H-SiC layers by sublimation epitaxy has been demonstrated. It is shown that a Au/Pd/Ti/Pd contact, which combines a low specific contact resistance (∼2 × 10−5 Ω cm2) with high thermal stability (up to 700°C), is the optimal contact to p-4H-SiC. The p-n structures obtained are used to fabricate packaged diodes with a breakdown voltage of up to 1400 V.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. A. S. Tager, Izv. Vyssh. Uchebn. Zaved., Fiz. 22(10), 6 (1979).

    Google Scholar 

  2. J. Crofton, P. A. Barnes, and J. R. Williams, Appl. Phys. Lett. 62, 384 (1993).

    Article  ADS  Google Scholar 

  3. Yu. A. Vodakov and E. N. Mokhov, Fiz. Tverd. Tela (St. Petersburg) 41, 822 (1999) [Phys. Solid State 41, 742 (1999)].

    Google Scholar 

  4. N. S. Savkina, A. A. Lebedev, D. V. Davidov, et al., Mater. Sci. Eng. B 61–62, 165 (1999).

    Google Scholar 

  5. A. A. Lebedev, A. A. Mal’tsev, N. K. Poletaev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 30, 1805 (1996) [Semiconductors 30, 944 (1996)].

    Google Scholar 

  6. V. A. Solov’ev, M. P. Mikhailova, K. D. Moiseev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 1300 (1998) [Semiconductors 32, 1157 (1998)].

    Google Scholar 

  7. D. J. Larkin, P. G. Neudeck, J. A. Powell, and L. G. Matus, Appl. Phys. Lett. 65, 1659 (1994).

    Article  ADS  Google Scholar 

  8. X. Li, K. Tone, L. Hui, et al., Mater. Sci. Forum 338–342, 1375 (2000).

    Google Scholar 

  9. G. Sarov, T. Cholakova, and R. Kakanakov, Mater. Sci. Forum 457–460, 1005 (2004).

    Google Scholar 

  10. L. Kassamakova, R. Kakanakov, I. Kassamakov, et al., IEEE Trans. Electron Devices 46, 605 (1999).

    Article  Google Scholar 

  11. E. V. Kalinina, G. F. Kholuyanov, A. V. Shchukarev, et al., Diamond Relat. Mater. 8, 1114 (1999).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    E. V. Bogdanova, A. A. Volkova, A. E. Cherenkov & A. A. Lebedev

  2. Institute of Applied Physics, Plovdiv, 4000, Bulgaria

    R. D. Kakanakov, L. P. Kolaklieva, G. A. Sarov & T. M. Cholakova

  3. Svetlana-Elektropribor, St. Petersburg, 194156, Russia

    A. V. Kirillov & L. P. Romanov

Authors
  1. E. V. Bogdanova
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. A. Volkova
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. E. Cherenkov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. A. Lebedev
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. R. D. Kakanakov
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. L. P. Kolaklieva
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. G. A. Sarov
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. T. M. Cholakova
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. A. V. Kirillov
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. L. P. Romanov
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 6, 2005, pp. 762–766.

Original Russian Text Copyright © 2005 by Bogdanova, Volkova, Cherenkov, Lebedev, Kakanakov, Kolaklieva, Sarov, Cholakova, Kirillov, Romanov.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Bogdanova, E.V., Volkova, A.A., Cherenkov, A.E. et al. A 4H-SiCp-i-n diode fabricated by a combination of sublimation epitaxy and CVD. Semiconductors 39, 730–733 (2005). https://doi.org/10.1134/1.1944867

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1944867

Keywords

Search

Navigation