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Energy parameters of two-electron tin centers in PbSe

  • Electronic and Optical Properties of Semiconductors
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Abstract

Relations that make it possible to use an experimentally measured temperature dependence of carrier concentration to determine the Hubbard energy U and temperature dependence of the Fermi level F for two-electron tin centers in lead selenide are derived. A study of Pb1−xy SnxNaySe solid solutions shows that their Fermi level in the temperature region 100–600 K lies below the valence band top E v and that their F(T) dependences are linear, with extrapolation to T = 0 yielding E V F = 210±10 meV. The Hubbard energy of the two-electron tin centers in PbSe is found to be U = −80±20 meV.

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References

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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 6, 2005, pp. 669–672.

Original Russian Text Copyright © 2005 by Nemov, Nasredinov, P. Seregin, N. Seregin, Khuzhakulov.

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Nemov, S.A., Nasredinov, F.S., Seregin, P.P. et al. Energy parameters of two-electron tin centers in PbSe. Semiconductors 39, 638–641 (2005). https://doi.org/10.1134/1.1944852

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  • DOI: https://doi.org/10.1134/1.1944852

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