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Kinetics of defect formation in ZnO subjected to a flux of oxygen radicals

  • Atomic Structure and Nonelectronic Properties of Semiconductors
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Abstract

A kinetic analysis of the defect formation in a II–VI compound (ZnO) subjected to a flux of oxygen radicals has made it possible to develop a new method for obtaining single-crystal layers that uses a high-temperature heat treatment of the above single-crystal compound under these conditions. Using this method, a change from n-to p-type conductivity in ZnO is accomplished. This technology makes it possible to obtain heterostructures.

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Authors and Affiliations

  1. Academy of Management and Information Technologies, Berdyansk, 71118, Ukraine

    M. B. Kotlyarevsky & A. V. Marakhovskii

  2. Berdyansk State Pedagogical University, Berdyansk, 71100, Ukraine

    I. V. Rogozin

Authors
  1. M. B. Kotlyarevsky
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  2. I. V. Rogozin
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  3. A. V. Marakhovskii
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 6, 2005, pp. 641–646.

Original Russian Text Copyright © 2005 by Kotlyarevsky, Rogozin, Marakhovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \).

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Kotlyarevsky, M.B., Rogozin, I.V. & Marakhovskii, A.V. Kinetics of defect formation in ZnO subjected to a flux of oxygen radicals. Semiconductors 39, 609–614 (2005). https://doi.org/10.1134/1.1944847

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  • DOI: https://doi.org/10.1134/1.1944847

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