Abstract
The room-temperature electroreflectance and reflectance of a GaAs/AlGaAs single quantum well (QW) structure are studied. An oscillatory behavior of the electroreflectance signal as a function of the thickness of the top AlGaAs barrier layer is observed. The experimental data are analyzed using a dielectric function of QWs and the transfer matrix method for multilayer systems. This analysis allows the determination of the parameters of the QW and the barrier layers.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 6, 2005, pp. 729–734.
Original Russian Text Copyright © 2005 by Herasimovich, Shokhovets, Gobsch, Domanevski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \).
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Herasimovich, A.A., Shokhovets, S.V., Gobsch, G. et al. Room-temperature electroreflectance and reflectance of a GaAs/AlGaAs single quantum well structure. Semiconductors 39, 697–702 (2005). https://doi.org/10.1134/1.1944861
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DOI: https://doi.org/10.1134/1.1944861