Low-temperature relaxation of a solid solution of iron in gallium phosphide E. S. DemidovV. V. KarzanovO. N. Morozkin Atomic Structure and Non-electronic Properties of Semiconductors Pages: 377 - 379
Modeling Si nanoprecipitate formation in SiO2 layers with excess Si atoms A. F. LeierL. N. SafronovG. A. Kachurin Atomic Structure and Non-electronic Properties of Semiconductors Pages: 380 - 384
Optical spectra and electronic structure of indium nitride V. V. SobolevM. A. Zlobina Electronic and Optical Properties of Semiconductors Pages: 385 - 390
Electrostatic model of the energy gap between Hubbard bands for boron atoms in silicon N. A. PoklonskiiA. I. Syaglo Electronic and Optical Properties of Semiconductors Pages: 391 - 393
The influence of defect clusters on redistribution of doping impurities in n-and p-type Si0.7Ge0.3 irradiated by reactor neutrons A. P. Dolgolenko Electronic and Optical Properties of Semiconductors Pages: 394 - 397
Acoustostimulated activation of bound defects in CdHgTe alloys A. I. VlasenkoYa. M. OlikhR. K. Savkina Electronic and Optical Properties of Semiconductors Pages: 398 - 401
A model of how the thermal ionization energy of impurities in semiconductors depends on their concentration and compensation N. A. PoklonskiiA. I. SyagloG. Biskupski Electronic and Optical Properties of Semiconductors Pages: 402 - 406
Low-temperature photoluminescence in holmium-doped silicon B. A. AndreevN. A. SobolevE. O. Parshin Electronic and Optical Properties of Semiconductors Pages: 407 - 409
Generation-recombination instabilities in thin-film structures V. V. Kolobaev Semiconductor Structures, Interfaces and Surfaces Pages: 410 - 411
Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures V. M. BotnaryukYu. V. ZhilyaevV. Yu. Rud’ Semiconductor Structures, Interfaces and Surfaces Pages: 412 - 415
Surface of n-type InP (100) passivated in sulfide solutions V. N. BessolovM. V. LebedevD. R. T. Zahn Semiconductor Structures, Interfaces and Surfaces Pages: 416 - 420
Electrical and photoelectric characteristics of an isotypic n-ZnO-n-Si structure S. V. SlobodchikovKh. M. SalikhovE. V. Russu Semiconductor Structures, Interfaces and Surfaces Pages: 421 - 422
Analysis of mechanisms for electron scattering in GaAs/AlxGa1−x As superlattices with doped quantum wells for longitudinal resonant current flow in high electric fields and at low temperatures S. I. BorisenkoG. F. Karavaev Low-Dimensional Systems Pages: 423 - 428
Luminescence and electrical properties of InGaN/AlGaN/GaN light emitting diodes with multiple quantum wells V. E. KudryashovA. N. TurkinF. I. Manyakhin Low-Dimensional Systems Pages: 429 - 434
Photoionization of deep impurity centers in quantum well structures V. I. BelyavskiiYu. A. Pomerantsev Low-Dimensional Systems Pages: 435 - 439
Photovoltaic effect in the impurity absorption region of Si-structures with blocked impurity conductivity B. A. AronzonV. V. RylkovJ. Leotin Low-Dimensional Systems Pages: 440 - 446
Defects in a-Si:H films induced by Si ion implantation O. A. Golikova Amorphous, Glassy and Porous Semiconductors Pages: 447 - 450
Absorption and the optical gap of a-C:H films produced from acetylene plasmas E. A. Konshina Amorphous, Glassy and Porous Semiconductors Pages: 451 - 456
Conductivity relaxation in coated porous silicon after annealing S. P. ZiminA. N. Bragin Amorphous, Glassy and Porous Semiconductors Pages: 457 - 460
Photomemory in CdTe thin-film solar cells É. N. VoronkovA. E. SharonovV. V. Kolobaev The Physics of Semiconductor Devices Pages: 461 - 462
Polarization photosensitivity of ZnO/CdS/Cu(In,Ga)Se2 solar cells V. Yu. Rud’Yu. V. Rud’H. W. Schock The Physics of Semiconductor Devices Pages: 463 - 466
Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host A. F. Tsatsul’nikovB. V. VolovikD. Bimberg The Physics of Semiconductor Devices Pages: 467 - 470
Influence of deep traps on current transport in Pd-p(n)-CdTe structures S. V. SlobodchikovKh. M. SalikhovE. V. Russu The Physics of Semiconductor Devices Pages: 471 - 472
Determination of the parameters of deep levels from the relaxational delay of breakdown of a p-n junction S. V. BulyarskiiYu. N. SerëzhkinV. K. Ionychev The Physics of Semiconductor Devices Pages: 473 - 476
Effect of laser radiation on GaP epitaxial diode structures V. V. InyakovE. N. MoosYu. A. Shrainer The Physics of Semiconductor Devices Pages: 477 - 478
Vitali\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Ivanovich Stafeev (on his 70th birthday) Zh. I. AlferovL. A. BovinaL. E. Vorob’ev Personalia Pages: 479 - 480