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Design and Performance Assessment of Graded Channel Gate-All-Around Silicon Nanowire FET for Biosensing Applications

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Abstract

In this paper, we present a graded channel gate-all-around silicon nanowire-FET biosensor working on dielectric modulation through a cavity carved at the center of the gate for label-free biomolecule detection. These biomolecules get fixed in the cavity region and affect electrical parameters such as impedance, resistance, capacitance, and charge field effect at the device junction. The electrostatic interaction between the gate and the channel is altered because of biomolecule absorption. Variations in the biosensing device's threshold voltage, drain current, and sub-threshold slope can detect the presence and kind of biomolecule in the cavity. The cavity length varies between 10 and 14 nm, with various dielectric constants utilized. The effect of different biomolecules on the drain current, SS, Vth, switching ratio, energy band, transconductance and electric field is analyzed. It is found that higher dielectric constants result in higher drain current levels, which increases the device's sensitivity. GC-GAA-NWFET has a high sensitivity ~ 138 mV as a biosensor and has a lower leakage current.

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Data used for the results are available in the manuscript.

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Acknowledgements

We thank VLSI research group, Department of Electronics and Communication Engineering NIT Delhi for lab facilities and research environment to carry out this work.We would like to thank NITTTR Chandigarh for their interest in this work and useful comments to draft the final form of the paper.

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Authors and Affiliations

  1. Department of ECE, National Institute of Technology Delhi, Delhi, India

    Ashima & Vaithiyanathan Dhandapani

  2. Department of ECE, NITTTR, Chandigarh, India

    Balwinder Raj

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  1. Ashima
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  2. Vaithiyanathan Dhandapani
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  3. Balwinder Raj
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Contributions

• Ashima: Simulation work and results compilations.

• D. Vaithiyanathan: Paper designing and proof reading.

• Balwinder Raj: Paper writing and results explanation.

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Correspondence to Balwinder Raj.

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Ashima, Dhandapani, V. & Raj, B. Design and Performance Assessment of Graded Channel Gate-All-Around Silicon Nanowire FET for Biosensing Applications. Silicon 15, 3535–3542 (2023). https://doi.org/10.1007/s12633-022-02272-8

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