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Analytical modeling and sensitivity analysis of dielectric-modulated junctionless gate stack surrounding gate MOSFET (JLGSSRG) for application as biosensor

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Abstract

An analytical model of dielectric-modulated junctionless gate-stack surrounding gate MOSFET for application as a biosensor is presented. An expression for the channel-center potential is obtained by solving the 2-D Poisson’s equation using a parabolic-potential approach. An analytical model for the threshold voltage is developed from the minimum channel-center potential to analyze the sensitivity of the biosensor. Moreover, the effects of the variation of the different device dimensional parameters on the sensitivity of the biosensor were investigated in order to study the dielectric modulation effects due to the permittivity changes by the biomolecules present within the nanogap cavity. The analytical model is verified and validated with the help of TCAD device simulations.

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Authors and Affiliations

  1. ECE Department, Bengal Institute of Technology and Management, Bolpur, India

    Avik Chakraborty

  2. ECE Department, Kalyani Government Engineering College, Kalyani, India

    Angsuman Sarkar

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  1. Avik Chakraborty
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Appendices

Appendix-A

$$\begin{aligned} a_{11}= & {} \left( {-\frac{k_1 }{\lambda _1 }e^{\frac{L_2 -L_1 }{\lambda _1 }}-\frac{k_1 }{\lambda _1 }e^{\frac{L_1 -L_2 }{\lambda _1 }}} \right) -\left( {\frac{k_2 }{\lambda _2 }e^{\frac{L_2 -L_3 }{\lambda _2 }}-\frac{k_2 }{\lambda _2 }e^{\frac{L_3 -L_2 }{\lambda _2 }}} \right) ;\\ a_{12}= & {} {2k_2 }/{\lambda _2 }; \quad a_{21} ={2k_3 }/{\lambda _2 };\\ D_1= & {} -\frac{k_2 \Phi _{C2} }{\lambda _2 }e^{\frac{L_2 -L_3 }{\lambda _2 }}+\frac{2k_2 \Phi _{C2} }{\lambda _2 }-\frac{k_2 \Phi _{C2} }{\lambda _2 }e^{\frac{L_3 -L_2 }{\lambda _2 }} \\&-\frac{2k_1 V_1 }{\lambda _1 }+\frac{2k_1 \Phi _{C1} }{\lambda _1 }-\frac{k_1 \Phi _{C1} }{\lambda _1 }e^{\frac{L_2 -L_1 }{\lambda _1 }}-\frac{k_1 \Phi _{C1} }{\lambda _1 }e^{\frac{L_1 -L_2 }{\lambda _1 }}; \\ a_{22}= & {} \left( {\frac{-k_3 }{\lambda _2 }e^{\frac{L_3 -L_2 }{\lambda _2 }}-\frac{k_3 }{\lambda _2 }e^{\frac{L_2 -L_3 }{\lambda _2 }}} \right) -\left( {\frac{k_4 }{\lambda _3 }e^{\frac{L_3 -L_4 }{\lambda _3 }}-\frac{k_4 }{\lambda _3 }e^{\frac{L_4 -L_3 }{\lambda _3 }}} \right) ;\\ D_1= & {} -\frac{k_4 \Phi _{C3} }{\lambda _3 }e^{\frac{L_3 -L_4 }{\lambda _3 }}+\frac{2k_4 \Phi _{C3} }{\lambda _3 }\hbox { }-\frac{k_4 \Phi _{C3} }{\lambda _3 }e^{\frac{L_4 -L_3 }{\lambda _3 }} \\&-\frac{2k_4 V_4 }{\lambda _3 }+\frac{2k_3 \Phi _{C2} }{\lambda _2 }-\frac{k_3 \Phi _{C2} }{\lambda _2 }e^{\frac{L_3 -L_2 }{\lambda _2 }}-\frac{k_3 \Phi _{C2} }{\lambda _2 }e^{\frac{L_2 -L_3 }{\lambda _2 }};\\ \end{aligned}$$

Where

$$\begin{aligned} k_1= & {} 1/{e^{\frac{L_1 -L_2 }{\lambda _1 }}-e^{\frac{L_2 -L_1 }{\lambda _1 }}}; \quad k_2 =k_3 {=1}/{e^{\frac{L_2 -L_3 }{\lambda _2 }}-e^{\frac{L_3 -L_2 }{\lambda _2 }}};\\ k_4= & {} 1/{e^{\frac{L_3 -L_4 }{\lambda _3 }}-e^{\frac{L_4 -L_3 }{\lambda _3 }}}; \end{aligned}$$

Appendix-B

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Chakraborty, A., Sarkar, A. Analytical modeling and sensitivity analysis of dielectric-modulated junctionless gate stack surrounding gate MOSFET (JLGSSRG) for application as biosensor. J Comput Electron 16, 556–567 (2017). https://doi.org/10.1007/s10825-017-0999-2

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