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Analog Performance Analysis of High-K Spacer Dual Material Gate Graded Channel Nanotube

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Abstract

A dual-metal gate with a high-k spacer and a graded channel nanotube is proposed and analyzed. It is a promising architecture to combat the prominent lateral band-to-band tunneling (L-BTBT)-based gate-induced drain leakage (GIDL) experienced in gate-all-around structures, and has a superior analog performance. A comparative analysis of dual metal gate (DMG) and single metal gate (SMG) structures shows the higher efficacy of the DMG and high-k spacer structures. The proposed device structure offers peaks for gm, fT, gd, and IDS at 0.065 mS, 980 GHz, 0.11 mS/μm, and 10−3 A, respectively, making them a good choice for analog applications in the terahertz range. The work function tuning of the dual gate is demonstrated, and the use of graded channel and high-k spacers makes the proposed device a reliable candidate for scaling and applications, while being cost-effective and in sync with existing fabrication processes. This work illustrates the benefits of DMG with a high-k spacer over SMG and DMG structures without high-k spacer counterparts. It provides an incentive for further experimental exploration.

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Authors and Affiliations

  1. Department of ECE, National Institute of Technology Delhi, New Delhi, India

    Ashima Rai & D. Vaithiyanathan

  2. Department of ECE, NITTTR, Chandigarh, India

    Balwinder Raj

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  1. Ashima Rai
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  2. D. Vaithiyanathan
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Correspondence to Ashima Rai.

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Rai, A., Vaithiyanathan, D. & Raj, B. Analog Performance Analysis of High-K Spacer Dual Material Gate Graded Channel Nanotube. J. Electron. Mater. 52, 422–428 (2023). https://doi.org/10.1007/s11664-022-10003-3

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  • DOI: https://doi.org/10.1007/s11664-022-10003-3

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