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Simulation Analysis of High Field-Effect Mobility in p-Channel-Based Cylindrical Thin-Film Transistors

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Abstract

Tin monoxide (SnO) has gained considerable attention in recent years because of its high hole mobility, transparency, and possibility for mass production. This study investigates the simulation of p-channel SnO thin-film transistors (TFTs) using cylindrical geometry using both a 3D numerical simulation approach and theoretical insights. To analyze the electrical performance of the devices, the gate metal work function varied from 4.4 eV to 5.0 eV. Among the simulated cylindrical TFTs (CTFTs), the 4.4 eV device shows maximum field-effect mobility of 45.39 cm2/V s and a threshold voltage (Vth) of 1.38 V. This is the highest value for p-channel TFTs. In addition, the simulated characteristics are compared with experimental characteristics by adjusting the defect parameter values. A simulation of the leakage current density and gate capacitance was also performed to estimate the dielectric layer quality. The results were determined to be 8.5 × 10-10 A/cm2 and 7.2 × 10-7 F/cm2 for 4.4 eV CTFTs, respectively. Theoretically, first-principles calculations have been performed within density functional theory (DFT) using Tran–Blaha modified Becke–Johnson (TB-mBJ) functionals. The electronic band structure calculations estimate the electronic band gap as 2.2 eV.

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Authors and Affiliations

  1. Department of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban, 4041, South Africa

    Viswanath G. Akkili & Viranjay M. Srivastava

  2. Department of Physics, Indian Institute of Technology (ISM), Dhanbad, 826004, India

    N. Prudhvi Raju & R. Thangavel

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  1. Viswanath G. Akkili
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  2. N. Prudhvi Raju
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  3. R. Thangavel
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  4. Viranjay M. Srivastava
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Contributions

Viswanath G. Akkili (VGA) and Viranjay M. Srivastava (VMS) conducted this research; VGA designed and analyzed the model with data and wrote this article; VMS has verified the result with the designed model; R Thangavel (RT) and N Prudhvi Raju (NPR) did the theoretical simulation of SnO. All authors approved the final version.

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Correspondence to Viswanath G. Akkili.

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Akkili, V.G., Raju, N.P., Thangavel, R. et al. Simulation Analysis of High Field-Effect Mobility in p-Channel-Based Cylindrical Thin-Film Transistors. J. Electron. Mater. 51, 5015–5025 (2022). https://doi.org/10.1007/s11664-022-09753-x

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