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The effect of platinum contact metallization on Cu/Sn bonding

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Abstract

In this work, formation and evolution of microstructures in CuSn/Pt bonding were investigated after 320 °C reflow process as well as after high temperature storage test at 150 °C. Sputtered thin film platinum on silicon wafer and high purity platinum sheet were applied as contact metallizations for electroplated copper-tin based bonding metallurgy. As bonded microstructure showed PtSn4 intermetallic compound growth at the Pt/Sn interface, and both Cu6Sn5 and Cu3Sn phases formed at the Cu/Sn fiinterface. Both hexagonal and monoclinic Cu6Sn5 were found to coexist after 1000 h high temperature storage test. Platinum was discovered to dissolve into the Cu6Sn5 phase during soldering process and form (Cu, Pt)6Sn5 intermetallic compound exhibiting hexagonal allotropy. Meanwhile, under annealing, monoclinic Cu6Sn5 phase layer without platinum was observed to form between (Cu, Pt)6Sn5 grains and tin. Thermodynamic analysis was performed in order to reason the effects of Pt on the phase equilibria and phase stabilities. Results show that platinum has a significant impact on the stability of hexagonal Cu6Sn5.

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Acknowledgements

This work has been carried out as a part of an Eniac Project Lab4MEMS II (Grant Number 2013-2-621176). The authors would like to acknowledge the Innovation Funding Agency Business Finland (formerly Tekes), Okmetic and Murata Electronics for financial support. The authors acknowledge the provision of facilities as well as technical support by Aalto University at OtaNano—Nanomicroscopy Center (Aalto-NMC).

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  1. Department of Electrical Engineering and Automation, School of Electrical Engineering, Aalto University, PO Box 13500, FI 00076, Aalto, Finland

    Antti Rautiainen, Glenn Ross, Vesa Vuorinen, Hongqun Dong & Mervi Paulasto-Kröckel

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  1. Antti Rautiainen
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Rautiainen, A., Ross, G., Vuorinen, V. et al. The effect of platinum contact metallization on Cu/Sn bonding. J Mater Sci: Mater Electron 29, 15212–15222 (2018). https://doi.org/10.1007/s10854-018-9663-2

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