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Multilayer SnS2/few-layer MoS2 heterojunctions with in-situ floating photogate toward high-performance photodetectors and optical imaging application

原位集成光浮栅的多层SnS2/少层MoS2异质结用于高 性能光电探测器与光学成像

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Abstract

Since the successful preparation of the monolayer MoS2 phototransistor, two-dimensional (2D) layered materials (2DLMs) have been regarded as one of the most compelling candidates toward the implementation of the next generation of novel optoelectronic devices and systems. However, most reported 2DLM photodetectors suffer from specific shortcomings, such as low responsivity, large dark current, low specific detectivity, low on/off ratio, and sluggish response rate. Herein, multilayer SnS2/few-layer MoS2 van der Waals heterostructures have been constructed by stacking the MoS2 and SnS2 nanosheets grown by a single atmospheric pressure chemical vapor deposition method. The SnS2/MoS2 heterojunction photodetector demonstrates competitive overall performance with a large on/off ratio of 171, a high responsivity of 28.3 A W−1, and an excellent detectivity of 1.2 × 1013 Jones. In addition, an ultrafast response rate with the response/recovery time down to 1.38 ms/600 µs is achieved. The excellent properties are associated with the synergy of type-II band alignment of SnS2/MoS2 and the in-situ formed seamless floating photogate, which contribute to separating the photoexcited electron-hole pairs and extending the carrier lifetime. Taking advantage of the excellent photosensitivity, the SnS2/MoS2 device demonstrates proof-of-concept optical imaging application. On the whole, this study provides a distinctive perspective to implement advanced photodetectors with competitive overall performance.

摘要

自单层MoS2光电晶体管问世以来, 二维层状材料一直被认为是 实现下一代新型光电器件与系统的最引人瞩目的候选材料之一. 然而, 大多数报道的二维层状材料光电探测器都存在一定的缺点, 如响应率 低、暗电流大、比探测率低、开关比低、响应速率慢等. 在本研究中, 通过堆叠由大气压化学气相沉积技术所生长的MoS2和SnS2纳米片, 制 备出了多层SnS2/少层MoS2范德华异质结. 相应的SnS2/MoS2异质结光 电探测器展示出了具有竞争力的综合性能: 大开关比(171)、高响应率 (28.3 A W−1), 以及出色的比探测率(1.2 × 1013 Jones). 此外, 该器件还 实现了响应/恢复时间低至1.38 ms/600 μs的超快响应速率. 其优异的性 能与SnS2/MoS2异质结的II型能带排列以及原位形成的无缝光浮栅的协 同作用相关, 这有助于分离光激发的电子-空穴对, 并延长非平衡载流 子的寿命. 得益于出色的光敏性, 该SnS2/MoS2器件实现了概念验证的 光学成像应用. 总体而言, 本研究为实现具有优异综合性能的先进光电 探测器提供了独特视角.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (U2001215, 52272175, and 12104517), the Natural Science Foundation of Guangdong Province (2021A1515110403 and 2022A1515011487), the Science and Technology Projects in Guangzhou (202201011232), the Fundamental Research Funds for the Central Universities, Sun Yat-sen University (22qntd0101), the One-Hundred Talents Program of Sun Yat-sen University, and the State Key Laboratory of Optoelectronic Materials and Technologies.

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  1. State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, China

    Huaxin Yi  (易华鑫), Hailin Yang  (杨海林), Yuhang Ma  (马宇航), Qiaojue Ye  (叶俏珏), Jianting Lu  (陆健婷), Wan Wang  (王婉1), Yichao Zou  (邹逸超), Jiandong Yao  (姚健东) & Guowei Yang  (杨国伟)

  2. Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou, 510275, China

    Huaxin Yi  (易华鑫), Yichao Zou  (邹逸超), Jiandong Yao  (姚健东) & Guowei Yang  (杨国伟)

  3. Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou, 511443, China

    Churong Ma  (马楚荣)

  4. School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China

    Zhaoqiang Zheng  (郑照强)

  5. School of Science, Guilin University of Aerospace Technology, Guilin, 541004, China

    Zexiang Deng  (邓泽祥)

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  1. Huaxin Yi  (易华鑫)
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Contributions

Yao J, Ma C and Yang G designed this study. Yao J and Yang G supervised the project. Zou Y, Ma C, Deng Z, Zheng Z, Yao J and Yang G provided the experimental resources. Yi H synthesized the samples, conducted the characterizations, constructed the devices and performed optoelectronic measurements with help from Yang H, Ma Y, Ye Q, Lu J, Wang W and Zheng Z; Deng Z performed the theoretical calculations; Yi H, Ma C, Deng Z and Yao J analyzed the data; Yi H, Ma C, Deng Z and Yao J wrote the paper. All authors contributed to the general discussion of the manuscript.

Corresponding authors

Correspondence to Churong Ma  (马楚荣), Zexiang Deng  (邓泽祥) or Jiandong Yao  (姚健东).

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The authors declare that they have no conflict of interest.

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Supporting data are available in the online version of the paper.

Huaxin Yi received his BS degree from the School of Materials Science and Engineering, Hunan University in 2020. He is now pursuing his MS degree at the School of Materials Science and Engineering, Sun Yat-sen University, under the supervision of Prof. Jiandong Yao. His current research interests include the synthesis, optoelectronic properties and applications of 2D materials.

Churong Ma received his PhD degree in materials physics and chemistry from Sun Yat-sen University in 2019. He is currently a lecturer at the Institute of Photonics Technology, Jinan University. His research interests include the fabrication of low-dimensional nanostructures and their applications in optics and optoelectronics.

Zexiang Deng received his PhD degree in theoretical physics from Sun Yat-sen University in 2018. He held a postdoctoral position at the Department of Chemistry, the University of Hong Kong before joining Guilin University of Aerospace Technology in 2021. His main research interests include first principle calculation, electronic and thermal properties, excited states, and Raman spectra of nanomaterials.

Jiandong Yao received his PhD degree in condensed matter physics from Sun Yat-sen University in 2018. Then, he joined the School of Materials Science & Engineering, Nanyang Technological University as a research fellow. Currently, he is an associate professor at the School of Materials Science & Engineering, Sun Yat-sen University. His research interests include the synthesis of low-di-mentional materials, design of novel device structures, and exploration of their photodetection properties and working principles.

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Multilayer SnS2/few-layer MoS2 heterojunctions with in-situ floating photogate toward high-performance photodetectors and optical imaging application

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Yi, H., Yang, H., Ma, C. et al. Multilayer SnS2/few-layer MoS2 heterojunctions with in-situ floating photogate toward high-performance photodetectors and optical imaging application. Sci. China Mater. 66, 1879–1890 (2023). https://doi.org/10.1007/s40843-022-2338-9

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