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Van der Waals integration inch-scale 2D MoSe2 layers on Si for highly-sensitive broadband photodetection and imaging

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Abstract

As one of the most promising materials for two-dimensional transition metal chalcogenides (2D TMDs), molybdenum diselenide (MoSe2) has great potential in photodetectors due to its excellent properties like tunable bandgap, high carrier mobility, and excellent air stability. Although 2D MoSe2-based photodetectors have been reported to exhibit admired performance, the large-area 2D MoSe2 layers are difficult to be achieved via conventional synthesis methods, which severely impedes its future applications. Here, we present the controllable growth of large-area 2D MoSe2 layers over 3.5-inch with excellent homogeneity by a simple post-selenization route. Further, a high-quality n-MoSe2/p-Si van der Waals (vdW) heterojunction device is in-situ fabricated by directly growing 2D n-MoSe2 layers on the patterned p-Si substrate, which shows a self-driven broadband photoresponse ranging from ultraviolet to mid-wave infrared with an impressive responsivity of 720.5 mA·W−1, a high specific detectivity of 1013 Jones, and a fast response time to follow nanosecond pulsed optical signal. In addition, thanks to the inch-level 2D MoSe2 layers, a 4 × 4 integrated heterojunction device array is achieved, which has demonstrated good uniformity and satisfying imaging capability. The large-area 2D MoSe2 layer and its heterojunction device array have great promise for high-performance photodetection and imaging applications in integrated optoelectronic systems.

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Acknowledgements

This work was financially supported by the National Key R&D Program of China (No. 2022YFB2803900), the National Natural Science Foundation of China (Nos. U2004165, U22A20138, and 11974016), the Natural Science Foundation of Henan Province, China (No. 202300410376), and Key Research and Development Program (social development) of Jiangsu Province (No. BE2021667). The authors are grateful for the technical support from the Nano-X from Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (SINANO).

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Authors and Affiliations

  1. School of Physics and Microelectronics, and Key Laboratory of Material Physics, Zhengzhou University, Zhengzhou, 450052, China

    Yupiao Wu, Jinjin Hei, Pei Lin, Zhifeng Shi, Xinjian Li & Di Wu

  2. Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA, 92093, USA

    Shuo-En Wu & Longhui Zeng

  3. School of Microelectronics Science and Technology, Sun Yat-Sen University, Zhuhai, 519082, China

    Qingming Chen

  4. Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China

    Xuechao Yu

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  1. Yupiao Wu
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Wu, Y., Wu, SE., Hei, J. et al. Van der Waals integration inch-scale 2D MoSe2 layers on Si for highly-sensitive broadband photodetection and imaging. Nano Res. 16, 11422–11429 (2023). https://doi.org/10.1007/s12274-023-5759-y

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