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Ultrawide-bandgap (6.14 eV) (AlGa)2O3/Ga2O3 heterostructure designed by lattice matching strategy for highly sensitive vacuum ultraviolet photodetection

以晶格匹配策略设计的超宽禁带(6.14 eV) (AlGa)2O3/Ga2O3异质结用于高灵敏度真空紫外探测

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Abstract

One judiciously designed strategy of utilizing an ultrathin but conductive Ga2O3:Si nanolayer to prepare (AlGa)2O3 crystalline film is demonstrated. Benefiting from the existence of Ga2O3:Si nanolayer, a high-quality (Al0.68Ga0.32)2O3 sesquioxide film with 68 at.% aluminum was epitaxially grown on sapphire substrates, which was characterized by high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy and X-ray diffraction. Its bandgap was broadened to 6.14 eV, and a vacuum ultraviolet (VUV) (AlGa)2O3/Ga2O3:Si photodetector was subsequently fabricated. The detector exhibits a pretty high on-off ratio of about 103, an open-circuit voltage of 1.0 V and a responsivity of 8.1 mAW−1 at 0 V bias voltage. The performances imply that the proposed strategy is valuable for improving the quality and also adjusting the bandgap of (AlGa)2O3 sesquioxides, which is expected to facilitate their application in VUV photodetection.

摘要

本文展示了一种利用超薄导电的Ga2O3: S i纳米层获得 (AlGa)2O3结晶薄膜的设计策略. 受益于Ga2O3:Si插层的存在, 高质 量的(Al0.68Ga0.32)2O3倍半氧化物薄膜得以在蓝宝石衬底上外延生 长, 其中铝组分含量高达~68%, 并被多种技术如HRTEM, XPS和 XRD等进行了系统性表征. (Al0.68Ga0.32)2O3材料的带隙被成功拓宽 至6.14 eV, 我们在此基础上制备出了(AlGa)2O3/Ga2O3:Si真空紫外 光电探测器. 该探测器性能优异, 开关比高达103, 开路电压为 1.0 V, 0 V偏压下响应度为8.1 mA W−1. 以上结果表明, 本文提出的 生长策略可有效提高(AlGa)2O3倍半氧化物的质量并调节其带隙, 有助于推动其在真空紫外探测领域的实际应用.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (91833301 and 61427901), Guangdong Natural Science Funds for Distinguished Young Scholars (2021B1515020105), and Guangdong Basic and Applied Basic Research Foundation (2019A1515110916).

Author information

Authors and Affiliations

  1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, 510275, China

    Yuqiang Li  (李宇强), Dan Zhang  (张丹), Lemin Jia  (贾乐敏), Siqi Zhu  (朱思琪), Yanming Zhu  (朱燕明), Wei Zheng  (郑伟) & Feng Huang  (黄丰)

Authors
  1. Yuqiang Li  (李宇强)
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  2. Dan Zhang  (张丹)
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  3. Lemin Jia  (贾乐敏)
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  4. Siqi Zhu  (朱思琪)
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  5. Yanming Zhu  (朱燕明)
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  6. Wei Zheng  (郑伟)
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  7. Feng Huang  (黄丰)
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Contributions

Li Y, Zhang D and Jia L performed the experiments; Li Y analyzed the data and wrote the paper with support from Zhang D and Zheng W. All authors contributed to the general discussion.

Corresponding authors

Correspondence to Dan Zhang  (张丹) or Wei Zheng  (郑伟).

Additional information

Yuqiang Li obtained his bachelor’s degree from Sun Yat-sen University in 2016. He is a PhD candidate at the School of Materials, Sun Yat-sen University. His research interest focuses on wide-bandgap semiconductor materials and devices.

Dan Zhang graduated from the University of the Chinese Academy of Sciences with a doctorate degree in 2017. She is now an associate researcher at the School of Materials, Sun Yat-sen University. Her main research field is wide-bandgap semiconductor materials and devices.

Wei Zheng received his PhD degree from Shenzhen University in 2014. His research interest focuses on semiconductor-based vacuum-ultraviolet (10-200 nm) photodetectors and condensed matter physics in ultra-wide bandgap semiconductors.

Conflict of interest

The authors declare no conflict of interest.

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40843_2021_1698_MOESM1_ESM.pdf

Ultrawide-bandgap (6.14 eV) (AlGa)2O3/Ga2O3 heterostructure designed by lattice matching strategy for highly sensitive vacuum ultraviolet photodetection

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Li, Y., Zhang, D., Jia, L. et al. Ultrawide-bandgap (6.14 eV) (AlGa)2O3/Ga2O3 heterostructure designed by lattice matching strategy for highly sensitive vacuum ultraviolet photodetection. Sci. China Mater. 64, 3027–3036 (2021). https://doi.org/10.1007/s40843-021-1698-3

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