1. Foreword

   • S. Sivananthan
   • N. K. Dhar
   • Y. Anter

   OriginalPaper 01 October 2013 Pages: 2999 - 3000

2. Raymond S. Balcerak, Paul W. Kruse, Thad D. Pickenpaugh, and Jan F. Schetzina: In Memoriam

   • Marion Reine

   Announcement 01 October 2013 Pages: 3001 - 3005

3. Characterization of Plasma Etching Process Damage in HgCdTe

   • A. Gaucher
   • J. Baylet
   • C. Cardinaud

   OriginalPaper 18 June 2013 Pages: 3006 - 3014

4. Numerical Simulation and Analytical Modeling of InAs nBn Infrared Detectors with p-Type Barriers

   • Marion Reine
   • Jonathan Schuster
   • Enrico Bellotti

   OriginalPaper 16 August 2013 Pages: 3015 - 3033

5. Design of Dislocation-Compensated ZnS _y Se_1−y /GaAs (001) Heterostructures

   • T. Kujofsa
   • J.E. Ayers

   OriginalPaper 08 October 2013 Pages: 3034 - 3040

6. Correlations of Bridgman-Grown Cd_0.9Zn_0.1Te Properties with Different Ampoule Rotation Schemes

   • Amlan Datta
   • Santosh Swain
   • Kelvin Lynn

   OriginalPaper 16 October 2013 Pages: 3041 - 3053

7. Interaction Between As_Hg and V _Hg in Arsenic-Doped Hg_1−x Cd _x Te

   • Ziyan Wang
   • Yan Huang
   • Wei Lu

   OriginalPaper 24 April 2013 Pages: 3054 - 3058

8. A Slightly Oxidizing Etchant for Polishing of CdTe and CdZnTe Surfaces

   • V. G. Ivanits’ka
   • P. Moravec
   • P. Höschl

   OriginalPaper 11 June 2013 Pages: 3059 - 3065

9. Effect of Epilayer Tilt on Dynamical X-ray Diffraction from Uniform Heterostructures with Asymmetric Dislocation Densities

   • P.B. Rago
   • F.C. Jain
   • J.E. Ayers

   OriginalPaper 11 June 2013 Pages: 3066 - 3070

10. Superlattice and Quantum Dot Unipolar Barrier Infrared Detectors

    • David Z.-Y. Ting
    • Alexander Soibel
    • Sarath D. Gunapala

    OriginalPaper 18 June 2013 Pages: 3071 - 3079

11. Numerical Simulation of Spatial and Spectral Crosstalk in Two-Color MWIR/LWIR HgCdTe Infrared Detector Arrays

    • Benjamin Pinkie
    • Enrico Bellotti

    OriginalPaper 18 June 2013 Pages: 3080 - 3089

12. Determination of Critical Thickness for Epitaxial ZnTe Layers Grown by Molecular Beam Epitaxy on (211)B and (100) GaSb Substrates

    • J. Chai
    • O. C. Noriega
    • T. H. Myers

    OriginalPaper 18 June 2013 Pages: 3090 - 3096

13. Comparison of the Schaake and Benson Etches to Delineate Dislocations in HgCdTe Layers

    • S. Farrell
    • Mulpuri V. Rao
    • K. Harris

    OriginalPaper 11 July 2013 Pages: 3097 - 3102

14. Performance of 12-μm- to 15-μm-Pitch MWIR and LWIR HgCdTe FPAs at Elevated Temperatures

    • Roger L. Strong
    • Michael A. Kinch
    • John M. Armstrong

    OriginalPaper 11 July 2013 Pages: 3103 - 3107

15. Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe

    • G. A. Umana-Membreno
    • H. Kala
    • L. Faraone

    OriginalPaper 11 July 2013 Pages: 3108 - 3113

16. Cross-Sectional Study of Macrodefects in MBE Dual-Band HgCdTe on CdZnTe

    • M. Reddy
    • D. D. Lofgreen
    • S. M. Johnson

    OriginalPaper 11 July 2013 Pages: 3114 - 3118

17. The Effect of Subbandgap Illumination on the Bulk Resistivity of CdZnTe

    • Jonathan S. Wright
    • Aaron L. Washington II
    • Vladimir Buliga

    OriginalPaper 24 August 2013 Pages: 3119 - 3124

18. Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy

    • K. Yasuda
    • M. Niraula
    • Y. Agata

    OriginalPaper 14 August 2013 Pages: 3125 - 3128

19. Advancements in THM-Grown CdZnTe for Use as Substrates for HgCdTe

    • Jason MacKenzie
    • Francis Joseph Kumar
    • Henry Chen

    OriginalPaper 23 August 2013 Pages: 3129 - 3132

20. Strain Determination in Quasi-Lattice-Matched LWIR HgCdTe/CdZnTe Layers

    • P. Ballet
    • X. Baudry
    • P. Gergaud

    OriginalPaper 14 August 2013 Pages: 3133 - 3137

21. Low-Temperature Photoluminescence Study of CdTe:In Crystals Annealed in Molten Bismuth

    • G. Yang
    • A. E. Bolotnikov
    • R. B. James

    OriginalPaper 14 August 2013 Pages: 3138 - 3141

22. TEM Characterization of HgCdTe/CdTe Grown on GaAs(211)B Substrates

    • Jae Jin Kim
    • R. N. Jacobs
    • David J. Smith

    OriginalPaper 14 August 2013 Pages: 3142 - 3147

23. Analysis of Mesa Dislocation Gettering in HgCdTe/CdTe/Si(211) by Scanning Transmission Electron Microscopy

    • R. N. Jacobs
    • A. J. Stoltz
    • J. Zu

    OriginalPaper 14 August 2013 Pages: 3148 - 3155

24. Novel Multistate Quantum Dot Gate FETs Using SiO₂ and Lattice-Matched ZnS-ZnMgS-ZnS as Gate Insulators

    • M. Lingalugari
    • K. Baskar
    • F. C. Jain

    OriginalPaper 14 August 2013 Pages: 3156 - 3163

25. Investigations on a Multiple Mask Technique to Depress Processing-Induced Damage of ICP-Etched HgCdTe Trenches

    • Z. H. Ye
    • W. D. Hu
    • L. He

    OriginalPaper 14 August 2013 Pages: 3164 - 3167

26. Atomic-Scale Characterization of II–VI Compound Semiconductors

    • David J. Smith

    OriginalPaper 14 August 2013 Pages: 3168 - 3174

27. Simulation of Current Transport in Polycrystalline CdTe Solar Cells

    • F. Troni
    • R. Menozzi
    • C. Buurma

    OriginalPaper 14 August 2013 Pages: 3175 - 3180

28. Investigation of Radiation Collection by InSb Infrared Focal-Plane Arrays with Micro-optic Structures

    • N. Guo
    • W. D. Hu
    • W. Lu

    OriginalPaper 21 August 2013 Pages: 3181 - 3185

29. Large-Format and Long-Wavelength Infrared Mercury Cadmium Telluride Detectors

    • J. Wenisch
    • H. Bitterlich
    • J. Ziegler

    OriginalPaper 20 September 2013 Pages: 3186 - 3190

30. Four-State Sub-12-nm FETs Employing Lattice-Matched II–VI Barrier Layers

    • F. Jain
    • P.-Y. Chan
    • E. Heller

    OriginalPaper 25 September 2013 Pages: 3191 - 3202

31. Investigation of Trap States in Mid-Wavelength Infrared Type II Superlattices Using Time-Resolved Photoluminescence

    • Blair C. Connelly
    • Grace D. Metcalfe
    • Edward H. Aifer

    OriginalPaper 25 September 2013 Pages: 3203 - 3210

32. Numerical Analysis of Current–Voltage Characteristics of LWIR nBn and p-on-n HgCdTe Photodetectors

    • M. Kopytko
    • K. Jóźwikowski

    OriginalPaper Open access 08 October 2013 Pages: 3211 - 3216

33. Impurity Gettering in (112)B HgCdTe/CdTe/Alternate Substrates

    • J. D. Benson
    • L. O. Bubulac
    • J. Bangs

    OriginalPaper 08 October 2013 Pages: 3217 - 3223

34. Variable-Field Hall Measurement and Transport in LW Single-Layer n-Type MBE Hg_1−x Cd _x Te

    • A. E. Brown
    • M. Jaime-Vasquez
    • S. Sivananthan

    OriginalPaper 08 October 2013 Pages: 3224 - 3230

35. High-Performance M/LWIR Dual-Band HgCdTe/Si Focal-Plane Arrays

    • M. F. Vilela
    • K. R. Olsson
    • S. M. Johnson

    OriginalPaper 08 October 2013 Pages: 3231 - 3238

36. Nitrogen Plasma Doping of Single-Crystal ZnTe and CdZnTe on Si by MBE

    • Richard Kodama
    • Thomas Seldrum
    • Siva Sivananthan

    OriginalPaper 08 October 2013 Pages: 3239 - 3242

37. 1/f Noise in HgCdTe Focal-Plane Arrays

    • M.A. Kinch
    • R.L. Strong
    • C.A. Schaake

    OriginalPaper 08 June 2013 Pages: 3243 - 3251

38. Impact of Surface Treatment on the Structural and Electronic Properties of Polished CdZnTe Surfaces for Radiation Detectors

    • Suleyman Tari
    • F. Aqariden
    • N. Kioussis

    OriginalPaper 18 June 2013 Pages: 3252 - 3258

39. Fabrication and Simulation of an Indium Gallium Arsenide Quantum-Dot-Gate Field-Effect Transistor (QDG-FET) with ZnMgS as a Tunnel Gate Insulator

    • P.-Y. Chan
    • M. Gogna
    • F. C. Jain

    OriginalPaper 11 June 2013 Pages: 3259 - 3266

40. Voltage-Dependent Charge Storage in Cladded Zn_0.56Cd_0.44Se Quantum Dot MOS Capacitors for Multibit Memory Applications

    • J. Khan
    • M. Lingalugari
    • F. Jain

    OriginalPaper 29 August 2013 Pages: 3267 - 3274

41. Quantum Dot Gate Three-State and Nonvolatile Memory Field-Effect Transistors Using a ZnS/ZnMgS/ZnS Heteroepitaxial Stack as a Tunnel Insulator on Silicon-on-Insulator Substrates

    • Ernesto Suarez
    • Pik-Yiu Chan
    • Faquir Jain

    OriginalPaper 07 September 2013 Pages: 3275 - 3282

42. Applications of the Infrared Measurement Analyzer: Hydrogenated LWIR HgCdTe Detectors

    • Christopher Buurma
    • Paul Boieriu
    • Sivalingam Sivananthan

    OriginalPaper 19 September 2013 Pages: 3283 - 3287

43. Low-Frequency Noise Characteristics of HgCdTe Infrared Photodiodes Operating at High Temperatures

    • W. Hassis
    • O. Gravrand
    • S. Benahmed

    OriginalPaper 30 August 2013 Pages: 3288 - 3296

44. Tuning Between Quantum-Dot- and Quantum-Well-Like Behaviors in Type II ZnTe Submonolayer Quantum Dots by Controlling Tellurium Flux During MBE Growth

    • H. Ji
    • B. Roy
    • I. L. Kuskovsky

    OriginalPaper 04 September 2013 Pages: 3297 - 3302

45. Modeling of Dark Current in HgCdTe Infrared Detectors

    • A. Ferron
    • J. Rothman
    • O. Gravrand

    OriginalPaper 18 September 2013 Pages: 3303 - 3308

46. Theoretical Modeling of HOT HgCdTe Barrier Detectors for the Mid-Wave Infrared Range

    • P. Martyniuk
    • W. Gawron
    • A. Rogalski

    OriginalPaper Open access 01 October 2013 Pages: 3309 - 3319

47. History of the “Detector Materials Engineering” Crystal Growth Process for Bulk Hg_1−x Cd _x Te

    • W. M. Higgins
    • D. A. Nelson
    • P. Norton

    OriginalPaper 25 September 2013 Pages: 3320 - 3330

48. Arsenic p-Doping of HgCdTe Grown by Molecular Beam Epitaxy (MBE): A Solved Problem?

    • James W. Garland
    • Christoph Grein
    • Sivalingam Sivananthan

    OriginalPaper 25 September 2013 Pages: 3331 - 3336

49. Ge-ZnSSe Spatial Wavefunction Switched (SWS) FETs to Implement Multibit SRAMs and Novel Quaternary Logic

    • P. Gogna
    • E. Suarez
    • F.-C. Jain

    OriginalPaper 08 October 2013 Pages: 3337 - 3343

50. The Surface Kinetics of MBE-Grown CdTe (211)B During In Situ Cyclic Annealing

    • C. M. Lennon
    • L. A. Almeida
    • J. Pellegrino

    OriginalPaper 08 October 2013 Pages: 3344 - 3348