Abstract
Multistate behavior has been achieved in quantum dot gate field-effect transistor (QDGFET) configurations using either SiO x -cladded Si or GeO x -cladded Ge quantum dots (QDs) with asymmetric dot sizes. An alternative method is to use both SiO x -cladded Si and GeO x -cladded Ge QDs in QDGFETs. In this paper, we present experimental verification of four-state behavior observed in a QDGFET with cladded Si and Ge dots site-specifically self-assembled in the gate region over a thin SiO2 tunnel layer on a Si substrate. This paper also investigates the use of lattice-matched high-κ ZnS-ZnMgS-ZnS layers as a gate insulator in mixed-dot Si QDGFETs. Quantum-mechanical simulation of the transfer characteristic (I D–V G) shows four-state behavior with two intermediate states between the conventional ON and OFF states.
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Lingalugari, M., Baskar, K., Chan, PY. et al. Novel Multistate Quantum Dot Gate FETs Using SiO2 and Lattice-Matched ZnS-ZnMgS-ZnS as Gate Insulators. J. Electron. Mater. 42, 3156–3163 (2013). https://doi.org/10.1007/s11664-013-2696-7
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DOI: https://doi.org/10.1007/s11664-013-2696-7