Abstract
Three-state behavior has been demonstrated in Si and InGaAs field-effect transistors (FETs) when two layers of cladded quantum dots (QDs), such as SiO x -cladded Si or GeO x -cladded Ge, are assembled on the thin tunnel gate insulator. This paper describes FET structures that have the potential to exhibit four states. These structures include: (1) quantum dot gate (QDG) FETs with dissimilar dot layers, (2) quantum dot channel (QDC) with and without QDG layers, (3) spatial wavefunction switched (SWS) FETs with multiple coupled quantum well channels, and (4) hybrid SWS–QDC structures having multiple drains/sources. Four-state FETs enable compact low-power novel multivalued logic and two-bit memory architectures. Furthermore, we show that the performance of these FETs can be enhanced by the incorporation of II–VI nearly lattice-matched layers in place of gate oxides and quantum well/dot barriers or claddings. Lattice-matched high-energy gap layers cause reduction in interface state density and control of threshold voltage variability, while providing a higher dielectric constant than SiO2. Simulations involving self-consistent solutions of the Poisson and Schrödinger equations, and transfer probability rate from channel (well or dot layer) to gate (QD layer) are used to design sub-12-nm FETs, which will aid the design of multibit logic and memory cells.
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References
H. Wang, T. Sun, and Q. Yang, IEEE Trans. Comput. 46, 11 (1997).
S. Rusu, S. Tam, H. Muljono, D. Ayers, J. Chang, R. Varada, M. Ratta, and S. Vora, A-SSCC (2009), pp. 9–12.
C. Kim and L. Chang, IEEE Design & Test (2011).
K. Uchida, M. Saitoh, and S. Kobayashi, IEDM, 569–572 (2008).
T. Tezuka, E. Toyoda, S. Nakaharai, T. Irisawa, N. Hirashita, Y. Moriyama, N. Sugiyama, N. Taoka, Y. Yamashita, O. Kiso, M. Harada, T. Yamamoto, and S. Takagi, IEDM, 887–890 (2007).
J.-H. Park, M. Tada, D. Kuzum, P. Kapur, H.-Y. Yu, H.S. Philip Wong, K.C. Saraswat, IEDM, 389–392 (2008).
J. Lin, S. Lee, H.-J. Oh, W. Yang, G.Q. Lo, D.L. Kwomg, and D.Z. Chi, IEDM (2008), pp. 401–404.
M.D. Schroer and J.R. Petta, Nat. Phys. 4, 516 (2008).
L.J. Klein, D.E. Savage, and M.A. Eriksson, Appl. Phys. Lett. 90, 033103 (2007).
N. Shaji, C.B. Simmons, M. Thalakulam, L.J. Klein, H. Qin, H. Luo, D.E. Savage, M.G. Lagally, A.J. Rimberg, R. Joynt, M. Friesen, R.H. Blick, S.N. Coppersmith, and M.A. Eriksson, Nat. Phys. 4, 540 (2008).
A.D. Franklin, M. Luisier, S.-J. Han, G. Tulevski, C.M. Breslin, L. Gignac, M.S. Lundstrom, and W. Haensch, Nano Lett. 12, 758 (2012).
A.D. Franklin, G.S. Tulevski, S.-J. Han, D. Shahrjerdi, Q. Cao, H.-Y. Chen, H.-S. Philip Wong, and W. Haensch, ACS Nano 6, 1109 (2012).
F.C. Jain, B. Miller, E. Suarez, P.-Y. Chan, S. Karmakar, F. Al-Amoody, M. Gogna, J. Chandy, and E. Heller, J. Electron. Mater. 40, 1717 (2011).
F. Jain and E. Heller, US Patent # 8,294,137 (23 October 2012).
F.C. Jain, J. Chandy, B. Miller, E.-S. Hasaneen, and E. Heller, Int. J. High Speed Electron. Syst. 20, 641 (2011).
P. Gogna, M. Lingalugari, J. Chandy, E. Heller, E.-S. Hasaneen, and F. Jain, Int. J. VLSI Des. Commun. Syst. (VLSICS) 3, 27 (2012).
F. Jain, S. Karmakar, P.-Y. Chan, E. Suarez, M. Gogna, J. Chandy, and E. Heller, J. Electron. Mater. 41, 2775 (2012).
R. Velampati and F. C. Jain, NSTI Nanotech, Santa Clara, CA, May 20–24, 2007.
M. Gogna, E. Suarez, P.Y. Chan, F. Al-Amoody, S. Kamakar, and F. Jain, J. Electron. Mater. 40 (2011).
D. Hisamoto, W.-C. Lee, J. Kedzierski, H. Takeuchi, K. Asano, C. Kuo, E. Anderson, T.-J. King, J. Bokor, and C. Hu, IEEE Trans. Electron Devices 47, 2320 (2000).
A.B. Sachid and C. Hu, IEEE Trans. Electron Devices 59, 2037 (2012).
F.C. Jain, E. Suarez, M. Gogna, F. Alamoody, D. Butkiewicus, R. Hohner, T. Liaskas, S. Karmakar, P.-Y. Chan, B. Miller, J. Chandy, and E. Heller, J. Electron. Mater. 38, 1574 (2009).
S. Karmakar, E. Suarez, and F. Jain, J. Electron. Mater. 40, 1749 (2011).
F. Jain, S. Karmakar, F. Alamoody, E. Suarez, M. Gogna, P.-Y. Chan, J. Chandy, B. Miller, and E. Heller, International Semiconductor Device Research Symposium, December 8–11, 2009 (College Park, MD).
F. Jain, K. Baskar, S. Karmakar, P. Chan, E. Suarez, B. Miller, J. Chandy, and E. Heller, Proc. International Semiconductor Device Research Symposium, Dec. 7–9, 2011 (College Park, MD).
S.J. Shin, C.S. Jung, B.J. Park, T.K. Yoon, J.J. Lee, S.J. Kim, J.B. Choi, Y. Takahashi, and D.G. Hasko, Appl. Phys. Lett. 97, 103101 (2010).
P.-Y. Chan, M. Linglugari, E. Suarez, B. Miller, J. Ayers, E. Heller, E.-S. Hasaneen, and F. Jain, Fabrication and Simulation of an Indium Gallium Arsenide Quantum-Dot-Gate Field-Effect Transistor (QDG-FET) with ZnMgS as Tunnel Gate Insulator II–VI Workshop, (Seattle, WA, November 27–29, 2012).
P. Gogna, E. Suarez, M. Lingalugari, J. Chandy, E. Heller, E.-S. Hasaneen, and F.C. Jain, Ge-ZnSSe Spatial Wavefunction Switched (SWS)-FETs to Implement Multi-bit SRAMs and Novel Quaternary Logic, II–VI Workshop, November 27–29, 2012 (Seattle, WA).
F.C. Jain and F. Papadimitrakopoulos, US Patent # 7,368,370 (2008).
F. Jain, R. Velampati, and F. Papadimitrakopoulos, EIPBN Conference, June 1–4, 2010 (Anchorage, AK).
S. Chuang and N. Holonyak, Appl. Phys. Lett. 80, 1270 (2002).
T. Hanyu and M. Kameyama, IEEE J. Solid-State Circuits 30, 1239 (1995).
A.F. Gonzalez and P. Mazumder, IEEE Trans. Comput. 47, 947 (1998).
B. Radanovic, M. Syrzycki, Canadian Conference on Electrical and Computer Engineering (1996), pp. 190–193.
O. Ishizuka and D. Handoko, Proc. 27th Int. Symp. Multiple-Valued Logic (1997), pp. 169–174.
M. Radosavljevic et al., IEDM Proc. Digest, December 2009.
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Jain, F., Chan, PY., Suarez, E. et al. Four-State Sub-12-nm FETs Employing Lattice-Matched II–VI Barrier Layers. J. Electron. Mater. 42, 3191–3202 (2013). https://doi.org/10.1007/s11664-013-2758-x
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DOI: https://doi.org/10.1007/s11664-013-2758-x