1. Foreword

   • Paul M. Amirtharaj
   • Ishwara B. Bhat

   EditorialNotes Pages: 489 - 489

2. The organization of the MCT workshop: An innovative approach to universities, industry, and government working together

   • William E. Spicer

   Special Issue Paper Pages: 490 - 493

3. Integrated multi-sensor control of II–VI MBE for growth of complex IR detector structures

   • J. E. Jensen
   • J. A. Roth
   • T. J. deLyon

   Special Issue Paper Pages: 494 - 499

4. Automated compositional control of Hg_1−xCd_xTe during MBE, using in situ spectroscopic ellipsometry

   • L. A. Almeida
   • J. N. Johnson
   • B. Johs

   Special Issue Paper Pages: 500 - 503

5. Analysis of the variation in the composition as a function of growth parameters in the MBE growth of indium doped Hg_1−xCd_xTe

   • H. R. Vydyanath
   • F. Aqariden
   • L. Becker

   Special Issue Paper Pages: 504 - 506

6. Observation of prevalence of quasi-equilibrium in the MBE growth of Hg_1−xCd_xTe

   • H. R. Vydyanath
   • F. Aqariden
   • Vaidya Nathan

   Special Issue Paper Pages: 507 - 509

7. Progress in MOVPE of HgCdTe for advanced infrared detectors

   • P. Mitra
   • F. C. Case
   • M. B. Reine

   Special Issue Paper Pages: 510 - 520

8. Monitoring of CdTe atomic layer epitaxy using in-situ spectroscopic ellipsometry

   • S. Dakshinamurthy
   • I. Bhat

   Special Issue Paper Pages: 521 - 526

9. Electrical and optical properties of lodine doped CdZnTe layers grown by metalorganic vapor phase epitaxy

   • K. Yasuda
   • K. Kojima
   • Y. Asai

   Special Issue Paper Pages: 527 - 531

10. Investigation of iodine as a donor in MBE grown Hg_1−xCd_xTe

    • F. Goschenhofer
    • J. Gerschütz
    • G. Landwehr

    Special Issue Paper Pages: 532 - 535

11. Molecular-beam epitaxy of InTlAs

    • M. D. Lange
    • D. F. Storm
    • Teresa Cole

    Special Issue Paper Pages: 536 - 541

12. Heteroepitaxy of HgCdTe (211)B on Ge substrates by molecular beam epitaxy for infrared detectors

    • J. P. Zanatta
    • P. Ferret
    • G. Destefanis

    Special Issue Paper Pages: 542 - 545

13. MBE P-on-n Hg_1−xCd_xTe heterostructure detectors on silicon substrates

    • P. S. Wijewarnsuriya
    • M. Zandian
    • S. Sivananthan

    Special Issue Paper Pages: 546 - 549

14. Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications

    • T. J. de Lyon
    • R. D. Rajavel
    • M. S. Smith

    Special Issue Paper Pages: 550 - 555

15. Effect of constrained growth on defect structures in microgravity grown CdZnTe boules

    • B. Raghothamachar
    • H. Chung
    • D. J. Larson Jr.

    Special Issue Paper Pages: 556 - 563

16. Progress in CdZnTe substrate producibility and critical drivers of IRFPA yield originating with CdZnTe substrates

    • S. L. Price
    • H. L. Hettich
    • E. O. Mc Lean

    Special Issue Paper Pages: 564 - 572

17. Lithium, sodium, and copper in Hg_0.78Cd_0.22Te and CdTe-based substrates

    • M. A. Berding
    • A. Sher
    • M. Van Schilfgaarde

    Special Issue Paper Pages: 573 - 578

18. Electrical properties of HgCdTe epilayers doped with silver using an AgNO₃ solution

    • M. Tanaka
    • K. Ozaki
    • Y. Miyamoto

    Special Issue Paper Pages: 579 - 582

19. Mercury interstitial generation in ion implanted mercury cadmium telluride

    • B. L. Williams
    • H. G. Robinson
    • C. R. Helms

    Special Issue Paper Pages: 583 - 588

20. Process modeling of HgCdTe infrared photodetectors

    • Heyward Robinson

    Special Issue Paper Pages: 589 - 594

21. MBE growth and characterization of in situ arsenic doped HgCdTe

    • A. C. Chen
    • M. Zandian
    • A. Sher

    Special Issue Paper Pages: 595 - 599

22. P-type as-doping of Hg_1−xCd_xTe grown by MOMBE

    • L. H. Zhang
    • S. D. Pearson
    • C. J. Summers

    Special Issue Paper Pages: 600 - 604

23. Modeling of arsenic activation in HgCdTe

    • M. A. Berding
    • A. Sher
    • J. Arias

    Special Issue Paper Pages: 605 - 609

24. Diffusion of phosphorus in CdTe

    • E. Hoonnivathana
    • E. D. Jones
    • L. J. Duckers

    Special Issue Paper Pages: 610 - 614

25. Investigation of the cross-hatch pattern and localized defects in epitaxial HgCdTe

    • David R. Rhiger
    • Jeffrey M. Peterson
    • Michael Dudley

    Special Issue Paper Pages: 615 - 623

26. The origin of hillocks in (Hg, Cd)Te grown by MOVPE

    • Janet E. Hails
    • David J. Cole-Hamilton
    • Jean Giess

    Special Issue Paper Pages: 624 - 633

27. A study of void defects in metalorganic molecular-beam epitaxy grown HgCdTe

    • L. H. Zhang
    • C. J. Summers

    Special Issue Paper Pages: 634 - 639

28. Formation and control of defects during molecular beam epitaxial growth of HgCdTe

    • D. Chandra
    • H. D. Shih
    • T. Orent

    Special Issue Paper Pages: 640 - 647

29. Physico-chemical properties of Ga and In dopants during liquid phase epitaxy of Cd_xHg_1−xTe

    • I. A. Denisov
    • V. M. Lakeenkov
    • O. K. Jouravlev

    Special Issue Paper Pages: 648 - 650

30. The use of atomic hydrogen for low temperature oxide removal from HgCdTe

    • L. S. Hirsch
    • K. S. Ziemer
    • Thierry Colin

    Special Issue Paper Pages: 651 - 656

31. Electron cyclotron resonance plasma preparation of CdZnTe (211)B surfaces for HgCdTe molecular beam epitaxy

    • J. N. Johnson
    • L. A. Almeida
    • M. Martinka

    Special Issue Paper Pages: 657 - 660

32. Laser beam induced current imaging of reactive ion etching induced n-type doping in HgCdTe

    • C. A. Musca
    • J. F. Siliquini
    • L. Faraone

    Special Issue Paper Pages: 661 - 667

33. HgCdTe-MISFET fabrication with multi-step surface passivation and quantum effects

    • C. H. Lee
    • S. W. Paik
    • J. M. Kim

    Special Issue Paper Pages: 668 - 671

34. Simulation of HgTe/CdTe interdiffusion using fundamental point defect mechanisms

    • S. Holander-Gleixner
    • H. G. Robinson
    • C. R. Helms

    Special Issue Paper Pages: 672 - 679

35. Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd_0.96Zn_0.04 Te (211)B substrates by molecular beam epitaxy

    • M. S. Han
    • S. R. Hahn
    • T. W. Kim

    Special Issue Paper Pages: 680 - 683

36. Surface treatment effects on the electrical properties of the interfaces between ZnS and LPE-grown Hg_0.7Cd_0.3Te

    • Seong Hoon Lee
    • Soo Ho Bae
    • Choong Ki Kim

    Special Issue Paper Pages: 684 - 688

37. An a-Si:H vacuum-compatible photoresist process for fabricating device structures in HgCdTe

    • R. E. Hollingsworth
    • C. Dehart
    • J. H. Dinan

    Special Issue Paper Pages: 689 - 693

38. Full band structure calculation of minority carrier lifetimes in HgCdTe and thallium-based alloys

    • Srinivasan Krishnamurthy
    • A. -B. Chen
    • A. Sher

    Special Issue Paper Pages: 694 - 697

39. Measurement of minority carrier lifetime in n-type MBE HgCdTe and its dependence on annealing

    • D. D. Edwall
    • R. E. DeWames
    • J. M. Arias

    Special Issue Paper Pages: 698 - 702

40. Optical absorption of un-implanted and implanted HgCdTe

    • D. H. Mao
    • A. J. Syllaios
    • C. R. Helms

    Special Issue Paper Pages: 703 - 708

41. Automated lifetime monitoring for factory process control

    • D. Lee
    • R. Briggs
    • P. Mitra

    Special Issue Paper Pages: 709 - 717

42. Determination of cut-off wavelength and composition distribution in Hg_1-xCd_xTe

    • Junhao Chu
    • Yongsheng Gui
    • Dingyuan Tang

    Special Issue Paper Pages: 718 - 721

43. Dark current generating mechanisms in short wavelength infrared photovoltaic detectors

    • R. E. Dewames
    • D. D. Edwall
    • A. D’Souza

    Special Issue Paper Pages: 722 - 726

44. MWIR DLPH HgCdTe photodiode performance dependence on substrate material

    • A. I. D’Souza
    • J. Bajaj
    • N. Nayar

    Special Issue Paper Pages: 727 - 732

45. Effect of device processing on 1/f noise in uncooled, auger-suppressed CdHgTe diodes

    • C. L. Jones
    • N. E. Metcalfe
    • T. Skauli

    Special Issue Paper Pages: 733 - 739

46. Multi-heterojunction large area HgCdTe long wavelength infrared photovoltaic detector for operation at near room temperatures

    • Charles Musca
    • Jaroslaw Antoszewski
    • Zenon Nowak

    Special Issue Paper Pages: 740 - 746

47. Molecular beam epitaxial growth and performance of HgCdTe-based simultaneous-mode two-color detectors

    • R. D. Rajavel
    • D. M. Jamba
    • P. M. Goetz

    Special Issue Paper Pages: 747 - 751

48. Hot phonon effects in ZnSe

    • Manjusha Mehendale
    • S. Sivananthan
    • W. Andreas Schroeder

    Special Issue Paper Pages: 752 - 755

49. Nitrogen doping of ZnSe and CdTe epilayers: A comparison of two rf sources

    • M. Moldovan
    • L. S. Hirsch
    • N. C. Giles

    Special Issue Paper Pages: 756 - 762

50. The kinetics of the growth of nitrogen-doped ZnSe grown by photo-assisted MOVPE

    • S. J. C. Irvine
    • M. U. Ahmed
    • P. Prete

    Special Issue Paper Pages: 763 - 768