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Automated lifetime monitoring for factory process control

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Abstract

A methodology is described for using automated lifetime measurements as a diagnostic tool and process monitor in the fabrication of HgCdTe detectors. The influence of background flux on the accuracy of these measurements is quantified using a new high-level injection model. Automated lifetime testing, applied to a large set of anneal experiments, has identified a mid-gap recombination center that is repeatably generated by quenching after the stoichiometric anneal. Lifetime reduction associated with this center is found to correlate both with the degree of compensation and with the amount of indium dopant. Passivation with CdTe is found effective in mitigating the effect.

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Authors and Affiliations

  1. Lockheed Martin IR Imaging Systems, USA

    D. Lee, R. Briggs, T. Norton, D. Parker, F. Smith, S. Tobin & J. Welsch

  2. Lockheed Martin Vought Systems, USA

    F. Case, J. Mc Curdy & P. Mitra

Authors
  1. D. Lee
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  2. R. Briggs
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  3. T. Norton
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  4. D. Parker
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  5. F. Smith
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  6. S. Tobin
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  7. J. Welsch
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  8. F. Case
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  9. J. Mc Curdy
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  10. P. Mitra
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Lee, D., Briggs, R., Norton, T. et al. Automated lifetime monitoring for factory process control. J. Electron. Mater. 27, 709–717 (1998). https://doi.org/10.1007/s11664-998-0041-3

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  • DOI: https://doi.org/10.1007/s11664-998-0041-3

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