Abstract
MBE growth of Hg1−xCdxTe has been carried out at 185°C. Parameters of growth have systematically varied. The resulting compositional changes and the electrical characteristics have been explained on the basis of the prevalence of quasi-equilibrium at the growth temperature.
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H.R. Vydyanath et al., to be published.
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Vydyanath, H.R., Aqariden, F., Wijewarnasuriya, P.S. et al. Observation of prevalence of quasi-equilibrium in the MBE growth of Hg1−xCdxTe. J. Electron. Mater. 27, 507–509 (1998). https://doi.org/10.1007/s11664-998-0006-6
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DOI: https://doi.org/10.1007/s11664-998-0006-6