Abstract
We have calculated the full band structures-based minority carrier lifetimes in small-gap semiconductor alloys. The contribution from first-order Coulomb interactions and second-order electron-electron interactions coupled through optical phonons are included. Our results agree reasonably well with experiments in Hg0.78Cd0.22Te. Similar calculations were carried out for lifetimes in In0.67Tl0.33P, In0.85Tl0.15As, and In0.92Tl0.08Sb. The minority carrier lifetimes in In0.67Tl0.33P and In0.92Tl0.08Sb are shorter than that in Hg0.78Cd0.22Te at all temperatures. However, the low-temperature minority carrier lifetime in In0.85Tl0.15 As is an order of magnitude longer than that in Hg0.78Cd0.22Te. Our calculations further suggest the possibility of increasing the lifetimes of minority carriers either by decreasing the density of states inside a critical energy and momentum region or by increasing the total hole population outside that critical region. Experimental observations that substantiate this suggestion are discussed.
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Krishnamurthy, S., Chen, A.B. & Sher, A. Full band structure calculation of minority carrier lifetimes in HgCdTe and thallium-based alloys. J. Electron. Mater. 27, 694–697 (1998). https://doi.org/10.1007/s11664-998-0038-y
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DOI: https://doi.org/10.1007/s11664-998-0038-y