The organization of the MCT workshop: An innovative approach to universities, industry, and government working together William E. Spicer Special Issue Paper Pages: 490 - 493
Integrated multi-sensor control of II–VI MBE for growth of complex IR detector structures J. E. JensenJ. A. RothT. J. deLyon Special Issue Paper Pages: 494 - 499
Automated compositional control of Hg1−xCdxTe during MBE, using in situ spectroscopic ellipsometry L. A. AlmeidaJ. N. JohnsonB. Johs Special Issue Paper Pages: 500 - 503
Analysis of the variation in the composition as a function of growth parameters in the MBE growth of indium doped Hg1−xCdxTe H. R. VydyanathF. AqaridenL. Becker Special Issue Paper Pages: 504 - 506
Observation of prevalence of quasi-equilibrium in the MBE growth of Hg1−xCdxTe H. R. VydyanathF. AqaridenVaidya Nathan Special Issue Paper Pages: 507 - 509
Progress in MOVPE of HgCdTe for advanced infrared detectors P. MitraF. C. CaseM. B. Reine Special Issue Paper Pages: 510 - 520
Monitoring of CdTe atomic layer epitaxy using in-situ spectroscopic ellipsometry S. DakshinamurthyI. Bhat Special Issue Paper Pages: 521 - 526
Electrical and optical properties of lodine doped CdZnTe layers grown by metalorganic vapor phase epitaxy K. YasudaK. KojimaY. Asai Special Issue Paper Pages: 527 - 531
Investigation of iodine as a donor in MBE grown Hg1−xCdxTe F. GoschenhoferJ. GerschützG. Landwehr Special Issue Paper Pages: 532 - 535
Molecular-beam epitaxy of InTlAs M. D. LangeD. F. StormTeresa Cole Special Issue Paper Pages: 536 - 541
Heteroepitaxy of HgCdTe (211)B on Ge substrates by molecular beam epitaxy for infrared detectors J. P. ZanattaP. FerretG. Destefanis Special Issue Paper Pages: 542 - 545
MBE P-on-n Hg1−xCdxTe heterostructure detectors on silicon substrates P. S. WijewarnsuriyaM. ZandianS. Sivananthan Special Issue Paper Pages: 546 - 549
Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications T. J. de LyonR. D. RajavelM. S. Smith Special Issue Paper Pages: 550 - 555
Effect of constrained growth on defect structures in microgravity grown CdZnTe boules B. RaghothamacharH. ChungD. J. Larson Jr. Special Issue Paper Pages: 556 - 563
Progress in CdZnTe substrate producibility and critical drivers of IRFPA yield originating with CdZnTe substrates S. L. PriceH. L. HettichE. O. Mc Lean Special Issue Paper Pages: 564 - 572
Lithium, sodium, and copper in Hg0.78Cd0.22Te and CdTe-based substrates M. A. BerdingA. SherM. Van Schilfgaarde Special Issue Paper Pages: 573 - 578
Electrical properties of HgCdTe epilayers doped with silver using an AgNO3 solution M. TanakaK. OzakiY. Miyamoto Special Issue Paper Pages: 579 - 582
Mercury interstitial generation in ion implanted mercury cadmium telluride B. L. WilliamsH. G. RobinsonC. R. Helms Special Issue Paper Pages: 583 - 588
Process modeling of HgCdTe infrared photodetectors Heyward Robinson Special Issue Paper Pages: 589 - 594
MBE growth and characterization of in situ arsenic doped HgCdTe A. C. ChenM. ZandianA. Sher Special Issue Paper Pages: 595 - 599
P-type as-doping of Hg1−xCdxTe grown by MOMBE L. H. ZhangS. D. PearsonC. J. Summers Special Issue Paper Pages: 600 - 604
Modeling of arsenic activation in HgCdTe M. A. BerdingA. SherJ. Arias Special Issue Paper Pages: 605 - 609
Diffusion of phosphorus in CdTe E. HoonnivathanaE. D. JonesL. J. Duckers Special Issue Paper Pages: 610 - 614
Investigation of the cross-hatch pattern and localized defects in epitaxial HgCdTe David R. RhigerJeffrey M. PetersonMichael Dudley Special Issue Paper Pages: 615 - 623
The origin of hillocks in (Hg, Cd)Te grown by MOVPE Janet E. HailsDavid J. Cole-HamiltonJean Giess Special Issue Paper Pages: 624 - 633
A study of void defects in metalorganic molecular-beam epitaxy grown HgCdTe L. H. ZhangC. J. Summers Special Issue Paper Pages: 634 - 639
Formation and control of defects during molecular beam epitaxial growth of HgCdTe D. ChandraH. D. ShihT. Orent Special Issue Paper Pages: 640 - 647
Physico-chemical properties of Ga and In dopants during liquid phase epitaxy of CdxHg1−xTe I. A. DenisovV. M. LakeenkovO. K. Jouravlev Special Issue Paper Pages: 648 - 650
The use of atomic hydrogen for low temperature oxide removal from HgCdTe L. S. HirschK. S. ZiemerThierry Colin Special Issue Paper Pages: 651 - 656
Electron cyclotron resonance plasma preparation of CdZnTe (211)B surfaces for HgCdTe molecular beam epitaxy J. N. JohnsonL. A. AlmeidaM. Martinka Special Issue Paper Pages: 657 - 660
Laser beam induced current imaging of reactive ion etching induced n-type doping in HgCdTe C. A. MuscaJ. F. SiliquiniL. Faraone Special Issue Paper Pages: 661 - 667
HgCdTe-MISFET fabrication with multi-step surface passivation and quantum effects C. H. LeeS. W. PaikJ. M. Kim Special Issue Paper Pages: 668 - 671
Simulation of HgTe/CdTe interdiffusion using fundamental point defect mechanisms S. Holander-GleixnerH. G. RobinsonC. R. Helms Special Issue Paper Pages: 672 - 679
Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd0.96Zn0.04 Te (211)B substrates by molecular beam epitaxy M. S. HanS. R. HahnT. W. Kim Special Issue Paper Pages: 680 - 683
Surface treatment effects on the electrical properties of the interfaces between ZnS and LPE-grown Hg0.7Cd0.3Te Seong Hoon LeeSoo Ho BaeChoong Ki Kim Special Issue Paper Pages: 684 - 688
An a-Si:H vacuum-compatible photoresist process for fabricating device structures in HgCdTe R. E. HollingsworthC. DehartJ. H. Dinan Special Issue Paper Pages: 689 - 693
Full band structure calculation of minority carrier lifetimes in HgCdTe and thallium-based alloys Srinivasan KrishnamurthyA. -B. ChenA. Sher Special Issue Paper Pages: 694 - 697
Measurement of minority carrier lifetime in n-type MBE HgCdTe and its dependence on annealing D. D. EdwallR. E. DeWamesJ. M. Arias Special Issue Paper Pages: 698 - 702
Optical absorption of un-implanted and implanted HgCdTe D. H. MaoA. J. SyllaiosC. R. Helms Special Issue Paper Pages: 703 - 708
Automated lifetime monitoring for factory process control D. LeeR. BriggsP. Mitra Special Issue Paper Pages: 709 - 717
Determination of cut-off wavelength and composition distribution in Hg1-xCdxTe Junhao ChuYongsheng GuiDingyuan Tang Special Issue Paper Pages: 718 - 721
Dark current generating mechanisms in short wavelength infrared photovoltaic detectors R. E. DewamesD. D. EdwallA. D’Souza Special Issue Paper Pages: 722 - 726
MWIR DLPH HgCdTe photodiode performance dependence on substrate material A. I. D’SouzaJ. BajajN. Nayar Special Issue Paper Pages: 727 - 732
Effect of device processing on 1/f noise in uncooled, auger-suppressed CdHgTe diodes C. L. JonesN. E. MetcalfeT. Skauli Special Issue Paper Pages: 733 - 739
Multi-heterojunction large area HgCdTe long wavelength infrared photovoltaic detector for operation at near room temperatures Charles MuscaJaroslaw AntoszewskiZenon Nowak Special Issue Paper Pages: 740 - 746
Molecular beam epitaxial growth and performance of HgCdTe-based simultaneous-mode two-color detectors R. D. RajavelD. M. JambaP. M. Goetz Special Issue Paper Pages: 747 - 751
Hot phonon effects in ZnSe Manjusha MehendaleS. SivananthanW. Andreas Schroeder Special Issue Paper Pages: 752 - 755
Nitrogen doping of ZnSe and CdTe epilayers: A comparison of two rf sources M. MoldovanL. S. HirschN. C. Giles Special Issue Paper Pages: 756 - 762
The kinetics of the growth of nitrogen-doped ZnSe grown by photo-assisted MOVPE S. J. C. IrvineM. U. AhmedP. Prete Special Issue Paper Pages: 763 - 768