Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy J. D. MackenzieL. AbbaschianJ. van Hove Special Issue Paper Pages: 1266 - 1269
Low energy ion beam assisted grain size evolution in thin film deposition Krishna RajanR. RoyJ. J. Cuomo Special Issue Paper Pages: 1270 - 1273
Sputter-deposition of NiMnSb magnetic thin films from a composite target onto Si substrates J. A. CaballeroY. D. ParkJ. R. Childress Special Issue Paper Pages: 1274 - 1278
Effect of ion damage on the electrical and optical behavior of p-type GaAs and InGap K. N. LeeJ. W. LeeW. S. Hobson Special Issue Paper Pages: 1279 - 1282
Thermal stability of heavily tellurium-doped InP grown by metalorganic molecular beam epitaxy M. J. AntonellC. R. AbernathyT. E. Haynes Special Issue Paper Pages: 1283 - 1286
Effect of dry etching on surface properties of III-nitrides F. RenJ. R. LothianR. F. Karlicek Special Issue Paper Pages: 1287 - 1291
The role of ion characteristics in determining the structural and electrical quality of InN grown by metalorganic molecular beam epitaxy S. M. DonovanJ. D. MackenzieJ. Van Hove Special Issue Paper Pages: 1292 - 1296
Inductively coupled plasma assisted physical vapor deposition of titanium nitride coatings W. J. MengT. J. Curtis Special Issue Paper Pages: 1297 - 1302
Comparison of ECR plasma chemistries for etching of InGaP and AlGaP J. HongJ. W. LeeF. Ren Special Issue Paper Pages: 1303 - 1309
Electron cyclotron resonance plasma etching of materials for magneto-resistive random access memory applications K. B. JungJ. W. LeeA. T. Hurst Jr. Special Issue Paper Pages: 1310 - 1313
Comparison of dry etching of III-V semiconductors in ICl/Ar and IBr/Ar electron cyclotron resonance plasmas J. W. LeeJ. HongF. Ren Special Issue Paper Pages: 1314 - 1319
Gallium arsenide surface chemistry and surface damage in a chlorine high density plasma etch process C. R. Eddy Jr.O. J. GlembockiS. W. Pang Special Issue Paper Pages: 1320 - 1325
Deposition of diamond from alcohol precursors in an electron cyclotron resonance plasma system Donald R. GilbertMelanie L. CarassoJames H. Adair Special Issue Paper Pages: 1326 - 1330
Synthesis of the PZT films deposited on pt-coated (100) Si substrates for nonvolatile memory applications Ashok KumarM. R. AlamM. Shamsuzzoha Special Issue Paper Pages: 1331 - 1334
Atomic and molecular photostimulated desorption from complex ionic crystals Kenneth M. BeckMaureen I. MccarthyWayne P. Hess Special Issue Paper Pages: 1335 - 1341
Nanometer-scale studies of nitride/arsenide heterostructures produced by nitrogen plasma exposure of GaAs R. S. GoldmanR. M. FeenstraR. J. Hauenstein Special Issue Paper Pages: 1342 - 1348
Methods of defect-engineering shallow junctions formed by B+-implantation in Si E. G. RothO. W. HollandBent Nielsen Special Issue Paper Pages: 1349 - 1354
Sputter deposition of phosphors for electroluminescent flat panel displays Mark R. DavidsonBalu PathangeyC. N. King Special Issue Paper Pages: 1355 - 1360
The effect of dose rate and implant temperature on transient enhanced diffusion in boron implanted silicon K. S. JonesJ. ChenD. Venables Special Issue Paper Pages: 1361 - 1364
Ion beam-assisted planarization of chemically vapor deposited diamond thin films using electron cyclotron resonance plasma Dong-Gu LeeDonald R. GilbertRajiv K. Singh Special Issue Paper Pages: 1365 - 1369
Evolution of grain structure in thin film reactions K. BarmakJ. M. RickmanC. Michaelsen Erratum Pages: 1370 - 1370
