1. The effect of substrate surface roughness on GaN growth using MOCVD process

   • Dongwha Kum
   • Dongjin Byun

   Special Issue Paper Pages: 1098 - 1102

2. Characterization of MOVPE-grown (Al, In, Ga) N heterostructures by quantitative analytical electron microscopy

   • H. Lakner
   • G. Brockt
   • A. Sohmer

   Special Issue Paper Pages: 1103 - 1108

3. Stability and interface abruptness of In_xGa_1−xN/In_yGa_1−yN multiple quantum well structures grown by OMVPE

   • J. C. Ramer
   • D. Zubia
   • S. D. Hersee

   Special Issue Paper Pages: 1109 - 1113

4. Nucleation and growth behavior for GaN grown on (0001) sapphire via multistep growth approach

   • J. T. Kobayashi
   • N. P. Kobayashi
   • P. D. Dapkus

   Special Issue Paper Pages: 1114 - 1117

5. Flow modulation epitaxy of indium gallium nitride

   • S. Keller
   • U. K. Mishra
   • S. P. Denbaars

   Special Issue Paper Pages: 1118 - 1122

6. Al-Ga-In-Nitride heterostructures: MOVPE growth in production reactors and characterization

   • R. Beccard
   • O. Schoen
   • E. Woelk

   Special Issue Paper Pages: 1123 - 1126

7. Electrical and optical properties of oxygen doped GaN grown by MOCVD using N₂O

   • R. Niebuhr
   • K. H. Bachem
   • H. Jürgensen

   Special Issue Paper Pages: 1127 - 1130

8. The use of atmospheric pressure MOVPE for the growth of high performance uncooled 1300 nm DFB lasers

   • A. J. Taylor
   • A. S. Bridges
   • W. S. Ring

   Special Issue Paper Pages: 1131 - 1133

9. GaAs microlens arrays grown by shadow masked MOVPE

   • G. M. Peake
   • S. Z. Sun
   • S. D. Hersee

   Special Issue Paper Pages: 1134 - 1138

10. Metalorganic vapor phase epitaxial growth of all-AlGaAs visible (∼700 nm) vertical-cavity surface-emitting lasers on misoriented substrates

    • H. Q. Hou
    • M. Hagerott Crawford
    • R. J. Hickman

    Special Issue Paper Pages: 1140 - 1144

11. In-situ monitoring and control for MOCVD growth of AlGaAs and InGaAs

    • A. Kussmaul
    • S. Vernon
    • M. A. Dahleh

    Special Issue Paper Pages: 1145 - 1153

12. On-line growth monitoring of InP-based device structures by reflectance anisotropy spectroscopy

    • P. Kurpas
    • M. Sato
    • M. Weyers

    Special Issue Paper Pages: 1154 - 1158

13. Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy

    • P. Kurpas
    • A. Oster
    • W. Richter

    Special Issue Paper Pages: 1159 - 1163

14. Surface photoabsorption monitoring of the growth of GaAs and InGaAs at 650°C by MOCVD

    • Y. D. Kim
    • F. Nakamura
    • J. J. Coleman

    Special Issue Paper Pages: 1164 - 1168

15. Trisneopentylgallium as a precursor for atomic layer epitaxy of GaAs

    • P. Yeo
    • R. Arès
    • A. C. Jones

    Special Issue Paper Pages: 1174 - 1177

16. Growth study of AlGaAs using dimethylethylamine alane as the aluminum precursor

    • H. Q. Hou
    • W. G. Breiland
    • R. A. Stall

    Special Issue Paper Pages: 1178 - 1183

17. Role of high energy photons in dual spectral source rapid isothermal CVD

    • R. Singh
    • Y. Chen

    Special Issue Paper Pages: 1184 - 1188

18. Mechanism of doping gallium arsenide with carbon tetrachloride during organometallic vapor-phase epitaxy

    • M. L. Warddrip
    • M. J. Kappers
    • R. F. Hicks

    Special Issue Paper Pages: 1189 - 1193

19. Self-limiting OMCVD growth of GaAs on V-grooved substrates with application to InGaAs/GaAs quantum wires

    • Giorgio Biasiol
    • Frank Reinhardt
    • Eli Kapon

    Special Issue Paper Pages: 1194 - 1198

20. Growth of direct bandgap GalnP quantum dots on GaP substrates

    • Jong-Won Lee
    • Alfred T. Schremer
    • Joseph M. Ballantyne

    Special Issue Paper Pages: 1199 - 1204

21. Metalorganic vapor phase epitaxial growth and structural characterization of self-assembled InAs nanometer-sized Islands on InP(001)

    • H. Marchand
    • P. Desjardins
    • R. A. Masut

    Special Issue Paper Pages: 1205 - 1213

22. Formation of a step-free InAs quantum well selectively grown on a GaAs (111)B substrate

    • Toshio Nishida
    • Naoki Kobayashi

    Special Issue Paper Pages: 1214 - 1220

23. MOVPE growth of InPSb/InAs heterostructures for mid-infrared emitters

    • M. Heuken
    • C. V. Eichel-Streiber
    • H. Lakner

    Special Issue Paper Pages: 1221 - 1224

24. The growth of InAsSb/InAsP strained-layer superlattices for use in infrared emitters

    • R. M. Biefeld
    • A. A. Allerman
    • J. H. Burkhart

    Special Issue Paper Pages: 1225 - 1230

25. OMVPE growth of GaInAsSb/AlGaAsSb for quantum-well diode lasers

    • C. A. Wang
    • H. K. Choi

    Special Issue Paper Pages: 1231 - 1236

26. Growth of tin-doped indium antimonide for magnetoresistors

    • D. L. Partin
    • L. Green
    • C. M. Thrush

    Special Issue Paper Pages: 1237 - 1243

27. Effects of group V precursor and step structure on ordering in GaInP

    • S. H. Lee
    • Yu Hsu
    • G. B. Stringfellow

    Special Issue Paper Pages: 1244 - 1249

28. Growth of order/disorder heterostructures in GaInP using a variation in V/III ratio

    • Y. S. Chun
    • Y. Hsu
    • T. -Y. Seong

    Special Issue Paper Pages: 1250 - 1255

29. MOVPE of ZnMgSSe heterostructures for optically pumped blue-green lasers

    • H. Kalisch
    • H. Hamadeh
    • M. Heuken

    Special Issue Paper Pages: 1256 - 1260

30. The morphology of CdTe deposited by organometallic vapor phase epitaxy: The effect of substrate misorientation

    • K. Yong
    • P. J. Sides
    • A. J. Gellman

    Special Issue Paper Pages: 1261 - 1264